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SI2307CDS-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray si2307cds-t1-ge3: specified limits as data (metadata.characteristics, 40 rows from the datasheet) 27bd430 17d ago

SI2307CDS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

SI2307CDS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS), per the absolute maximum ratings.
2 S passive Source of the P-channel MOSFET; the continuous source-drain diode current is rated at -1.5 A at TC = 25 °C.
3 D passive Drain of the P-channel MOSFET; drain-source voltage is -30 V (VDS), and the drain pin also provides the thermal connection to the PC board.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -3.5 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID -2.8 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID -2.7 A TJ = 150 °C; TA = 25 °C 1
Continuous Drain Current ID -2.2 A TJ = 150 °C; TA = 70 °C 1
Pulsed Drain Current IDM -12 A 10 µs pulse width 1
Continuous Source-Drain Diode Current IS -1.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -0.91 A TA = 25 °C 1
Maximum Power Dissipation PD 1.8 W TC = 25 °C 1
Maximum Power Dissipation PD 1.14 W TC = 70 °C 1
Maximum Power Dissipation PD 1.1 W TA = 25 °C 1
Maximum Power Dissipation PD 0.7 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Peak temperature 1
Maximum Junction-to-Ambient RthJA 90 115 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient (steady state) RthJA 166 °C/W Steady state (note c) 1
Maximum Junction-to-Foot (Drain) RthJF 55 70 °C/W Steady state 1
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
On-State Drain Current ID(on) -6 A VDS ≤ 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.073 0.088 Ω VGS = - 10 V, ID = - 3.5 A 2
Drain-Source On-State Resistance RDS(on) 0.11 0.138 Ω VGS = - 4.5 V, ID = - 2.5 A 2
Total Gate Charge Qg 4.1 6.2 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A 2
Turn-On Delay Time td(on) 40 60 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 40 60 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 40 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 17 30 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5.5 10 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 13 25 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 17 30 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 7.7 15 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -1.5 A TC = 25 °C 2
Pulse Diode Forward Current ISM -12 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -0.75 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 17 30 ns IF = -2.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 11 20 nC IF = -2.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI2307CDS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2307cds-t1-ge3-etched.step / si2307cds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2307cds-t1-ge3.step / si2307cds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 17fd02335f13449d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF