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Si2306BDS-T1-GE3-HXY

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HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Si2306BDS-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOT-23

Si2306BDS-T1-GE3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold 1.0 V min to 2.5 V max at ID=250μA, with operation at gate voltages as low as 2.5 V.
2 D passive Drain; drain-source voltage rated 30 V with 4 A continuous and 16.4 A pulsed drain current, RDS(on) < 38mΩ at VGS=10V.
3 S passive Source; connects to the source terminal of the N-channel MOSFET, with body diode continuous forward current of 4 A and VSD max 1.2 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 29 38 mΩ VGS=10V, ID=4A 2
Static Drain-Source On-Resistance RDS(on) 45 65 mΩ VGS=4.5V, ID=3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 4 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 16 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=4A 2
Drain-Source Voltage VDS 30 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 4 A TA=25℃ 1
Drain Current-Pulsed IDM 16.4 A TA=25℃, Note 1 1
Maximum Power Dissipation PD 1 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 1
Input Capacitance Ciss 233 pF VDS=15V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 44 pF VDS=15V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 33 pF VDS=15V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 3 nC VDS=15V, ID=2A, VGS=10V 2
Gate-Source Charge Qgs 0.5 nC VDS=15V, ID=2A, VGS=10V 2
Gate-Drain Charge Qgd 0.8 nC VDS=15V, ID=2A, VGS=10V 2
Turn-on Delay Time td(on) 4 ns VDS=15V, ID=4A, RGEN=3Ω, VGS=10V 2
Turn-on Rise Time tr 2.1 ns VDS=15V, ID=4A, RGEN=3Ω, VGS=10V 2
Turn-off Delay Time td(off) 15 ns VDS=15V, ID=4A, RGEN=3Ω, VGS=10V 2
Turn-off Fall Time tf 3.2 ns VDS=15V, ID=4A, RGEN=3Ω, VGS=10V 2

CAD (KiCad official)

  • Symbol: Si2306BDS-T1-GE3-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2306bds-t1-ge3-hxy-etched.step / si2306bds-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2306bds-t1-ge3-hxy.step / si2306bds-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 c06fd796dc8a6c2d, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF