# SI2306A

**HXY MOSFET** · MOSFETs · SOT-23

SI2306A from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±12 V, and the device is specified for gate drive down to 2.5 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 30 V and continuous drain current at 5.8 A (pulsed 30 A). |
| 3 | S | passive | Source of the N-channel MOSFET; the body diode forward current is rated at 5.8 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID |  |  | 5.8 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 30 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 1.4 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 89 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | 33 |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.9 | 1.4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 41 | 55 | mΩ | VGS=2.5V, ID=4A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 32 | 42 | mΩ | VGS=4.5V, ID=5A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 28 | 30 | mΩ | VGS=10V, ID=5.8A | 2 |
| Forward Transconductance | gFS | 10 |  |  | S | VDS=5V, ID=5A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=5.8A | 2 |
| Diode Forward Current | IS |  |  | 5.8 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `SI2306A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2306a-etched.step` / `si2306a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2306a.step` / `si2306a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758135153455976448) (6 pp, sha256 `ddf0b425f9253371`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2306a-datasheet.pdf)