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Ray si2306: specified limits as data (metadata.characteristics, 27 rows from the datasheet) 209e040 16d ago

SI2306

Guangdong Hottech · MOSFETs · SOT-23

SI2306 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at 20 V (VGS ±20 V) per the absolute maximum ratings.
2 Source passive Source terminal of the N-channel MOSFET; the source-drain diode forward voltage is 0.8 V typical and 1.2 V maximum at IS = 1.25 A, VGS = 0 V.
3 Drain passive Drain terminal of the N-channel MOSFET, rated for 30 V drain-source voltage and 3.16 A continuous drain current (10 A pulsed).

Key specifications

Parameter Value
Manufacturer Guangdong Hottech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-source Voltage VGS 20 V 1
Drain Current (Continuous) ID 3.16 A 1
Drain Current (Pulsed) IDM 10 A 1
Total Power Dissipation PD 0.75 W @TA=25 C 1
Operating Junction and Storage Temperature Range Tj, Tstg -55 150 °C 1
Thermal Resistance Junction to Ambient RθJA 100 °C/W PCB mounted 1
Drain-Source Breakdown Voltage V(BR)DS 30 V VGS = 0V, ID =250µA 1
Gate-Threshold Voltage VGS(th) 1 3 V VDS =VGS, ID =250µA 1
Gate-Body Leakage IGSS -100 100 nA VDS =0V, VGS =±20V 1
Zero Gate Voltage Drain Current IDSS 0.5 µA VDS =30V, VGS =0V 1
Drain-Source On-Resistance RDS(on) 0.038 0.047 Ω VGS =10V, ID =3.5A 1
Drain-Source On-Resistance RDS(on) 0.052 0.065 Ω VGS =4.5V, ID =2.8A 1
Diode Forward Voltage VSD 0.8 1.2 V IS=1.25A,VGS=0V 1
Gate Charge Qg 3 4.5 nC VDS =15V,VGS =5V,ID =2.5A 1
Total Gate Charge Qgt 6 9 nC 1
Gate Resistance Rg 2.5 5 7.5 Ω f =1.0MHz 1
Turn-On Delay Time td(on) 7 11 ns VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω 1
Rise Time tr 12 18 ns VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω 1
Turn-Off Delay Time td(off) 14 25 ns VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω 1
Fall Time tf 6 10 ns VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω 1
Gate-Source Charge Qgs 1.6 nC VDS =15V,VGS =10V,ID =2.5A 1
Gate-Drain Charge Qgd 0.6 nC VDS =15V,VGS =10V,ID =2.5A 1
Input Capacitance Ciss 305 pF VDS =15V,VGS =0V,f =1MHz 1
Output Capacitance Coss 65 pF VDS =15V,VGS =0V,f =1MHz 1
Reverse Transfer Capacitance Crss 29 pF VDS =15V,VGS =0V,f =1MHz 1
Forward Transconductance gfs 7 S VDS =4.5V, ID =2.5A 1

CAD (KiCad official)

  • Symbol: SI2306
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2306-etched.step / si2306-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2306.step / si2306.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Guangdong Hottech datasheet (2 pp, sha256 6ea241e6962a95a4, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF