# SI2305M-6AF

**FOSAN** · MOSFETs · SOT-23

SI2305M-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V, threshold VGS(th) -0.4 to -1 V at ID = -250uA. |
| 2 | S | passive | Source of the P-channel MOSFET; body diode forward drop max -1.2 V at ISD = -5 A. |
| 3 | D | passive | Drain; BVDSS -20 V, continuous drain current -5.5 A and pulsed -23 A at TA = 25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | ID = -250uA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | ID = -250uA, VGS = VDS | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VGS=0V, VDS= -20V | 2 |
| Gate Body Leakage | IGSS |  |  | 100 | nA | VGS=+10V, VDS=0V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 29 | 42 | mΩ | ID= -5.4A, VGS= -4.5V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 35 | 55 | mΩ | ID= -4A, VGS= -2.5V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 45 | 75 | mΩ | ID= -3A, VGS= -1.8V | 2 |
| Diode Forward Voltage Drop | VSD |  |  | -1.2 | V | ISD= -5A, VGS=0V | 2 |
| Drain-Source Voltage (absolute maximum, BVDSS row) | BVDSS |  |  | -20 | V |  | 1 |
| Gate-Source Voltage | VGS |  |  | 10 | V |  | 1 |
| Drain Current (continuous) | ID |  |  | -5.5 | A | TA = 25°C | 1 |
| Drain Current (pulsed) | IDM |  |  | -23 | A |  | 1 |
| Total Device Dissipation | PD |  |  | 1200 | mW | TA = 25°C | 1 |
| Junction/Storage Temperature | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RΘJA |  |  | 105 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `SI2305M-6AF`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2305m-6af-etched.step` / `si2305m-6af-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2305m-6af.step` / `si2305m-6af.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [FOSAN datasheet](docs/si2305m-6af-datasheet.pdf) (5 pp, sha256 `c4d90ab5ea14a7bc`, retrieved 2026-10-21, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2305m-6af-datasheet.pdf)