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SI2305DS-T1-GE3-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2305DS-T1-GE3-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

SI2305DS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±12 V (absolute maximum).
2 S passive Source terminal; the source-drain body diode is rated at a continuous current of -2.1 A at TC = 25 °C and a pulsed current of -10 A.
3 D passive Drain terminal; the drain-source voltage is rated at -20 V, with a continuous drain current of -4 A at TC = 25 °C (package limited).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -4 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -3.2 A TC = 70 °C 1
Continuous Drain Current ID -3.5 A Tb, A = 25 °C, note c 1
Continuous Drain Current ID -2.5 A Tb, A = 70 °C, note c 1
Pulsed Drain Current IDM -10 A 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A Tb, A = 25 °C, note c 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W Tb, A = 25 °C, note c 1
Maximum Power Dissipation PD 0.8 W Tb, A = 70 °C, note c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t = 5 s, note c, d 1
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W Steady state 1
Maximum Junction-to-Ambient RthJA 166 °C/W Steady state, note d 1
Drain-Source Breakdown Voltage VDS -20 V VDS = 0 V, ID = -250 µA 2
VDS Temperature Coefficient VDS/TJ 13.4 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ 2.9 2
Gate-Source Threshold Voltage VGS(th) -0.5 -1.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -10 A VDS -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.06 Ω VGS = -10 V, ID = -3 A 2
Drain-Source On-State Resistance RDS(on) 0.065 Ω VGS = -4.5 V, ID = -2.5 A 2
Drain-Source On-State Resistance RDS(on) 0.08 Ω VGS = -2.5 V, ID = -2 A 2
Forward Transconductance gfs 15 S VDS = -5 V, ID = -3 A 2
Input Capacitance Ciss 835 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 180 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 155 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 10 nC VDS = -10 V, VGS = -4.5 V, ID = -3.1 A 2
Total Gate Charge Qg 6.4 nC VDS = -10 V, VGS = -2.5 V, ID = -3.1 A 2
Gate-Source Charge Qgs 1.7 nC 2
Gate-Drain Charge Qgd 3.4 nC 2
Gate Resistance Rg 0.9 4.4 8.8 f = 1 MHz 2
Turn-On Delay Time td(on) 22 33 ns VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 20 30 ns VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 28 42 ns VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -10 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -3.1 A 2
Body Diode Reverse Recovery Time trr 23 35 ns IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 12 20 nC IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 15 ns 2
Reverse Recovery Rise Time tb 8 ns 2

CAD (KiCad official)

  • Symbol: SI2305DS-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: si2305ds-t1-ge3-vb-etched.step / si2305ds-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2305ds-t1-ge3-vb.step / si2305ds-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 1c652880d27cfb24, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF