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SI2305DS-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2305ds-t1-ge3-vb: specified limits as data (metadata.characteristics, 48 rows from the datasheet)
2 files changed
+639−1
README.md+55@@ -21,6 +21,61 @@ SI2305DS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descrip | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -20 | | | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current | ID | -4 | | | A | TC = 25 °C (TJ = 150 °C) | 1 |+| Continuous Drain Current | ID | -3.2 | | | A | TC = 70 °C | 1 |+| Continuous Drain Current | ID | -3.5 | | | A | Tb, A = 25 °C, note c | 1 |+| Continuous Drain Current | ID | -2.5 | | | A | Tb, A = 70 °C, note c | 1 |+| Pulsed Drain Current | IDM | -10 | | | A | | 1 |+| Continuous Source-Drain Diode Current | IS | -2.1 | | | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | -1 | | | A | Tb, A = 25 °C, note c | 1 |+| Maximum Power Dissipation | PD | | | 2.5 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.6 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.25 | W | Tb, A = 25 °C, note c | 1 |+| Maximum Power Dissipation | PD | | | 0.8 | W | Tb, A = 70 °C, note c | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 75 | 100 | °C/W | t = 5 s, note c, d | 1 |+| Maximum Junction-to-Foot (Drain) | RthJF | | 40 | 50 | °C/W | Steady state | 1 |+| Maximum Junction-to-Ambient | RthJA | | | 166 | °C/W | Steady state, note d | 1 |+| Drain-Source Breakdown Voltage | VDS | -20 | | | V | VDS = 0 V, ID = -250 µA | 2 |+| VDS Temperature Coefficient | VDS/TJ | | 13.4 | | mV/°C | ID = -250 µA | 2 |+| VGS(th) Temperature Coefficient | VGS(th)/TJ | | 2.9 | | | | 2 |+| Gate-Source Threshold Voltage | VGS(th) | -0.5 | | -1.5 | V | VDS = VGS, ID = -250 µA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | -1 | | µA | VDS = -20 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | -10 | | µA | VDS = -20 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-State Drain Current | ID(on) | | -10 | | A | VDS -5 V, VGS = -4.5 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.06 | | Ω | VGS = -10 V, ID = -3 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.065 | | Ω | VGS = -4.5 V, ID = -2.5 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.08 | | Ω | VGS = -2.5 V, ID = -2 A | 2 |+| Forward Transconductance | gfs | | 15 | | S | VDS = -5 V, ID = -3 A | 2 |+| Input Capacitance | Ciss | | 835 | | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 |+| Output Capacitance | Coss | | 180 | | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 155 | | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 10 | | nC | VDS = -10 V, VGS = -4.5 V, ID = -3.1 A | 2 |+| Total Gate Charge | Qg | | 6.4 | | nC | VDS = -10 V, VGS = -2.5 V, ID = -3.1 A | 2 |+| Gate-Source Charge | Qgs | | 1.7 | | nC | | 2 |+| Gate-Drain Charge | Qgd | | 3.4 | | nC | | 2 |+| Gate Resistance | Rg | 0.9 | 4.4 | 8.8 | | f = 1 MHz | 2 |+| Turn-On Delay Time | td(on) | | 22 | 33 | ns | VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 20 | 30 | ns | VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 28 | 42 | ns | VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 9 | 18 | ns | VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Continuous Source-Drain Diode Current | IS | | -2.1 | | A | TC = 25 °C | 2 |+| Pulse Diode Forward Current | ISM | | -10 | | A | | 2 |+| Body Diode Voltage | VSD | | -0.8 | -1.2 | V | IS = -3.1 A | 2 |+| Body Diode Reverse Recovery Time | trr | | 23 | 35 | ns | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 12 | 20 | nC | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Reverse Recovery Fall Time | ta | | 15 | | ns | | 2 |+| Reverse Recovery Rise Time | tb | | 8 | | ns | | 2 |+ ## CAD (KiCad official) - Symbol: `SI2305DS-T1-GE3-VB`
page.json+584−1@@ -147,6 +147,589 @@ "Package": "SOT-23(TO-236)", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "1c652880d27cfb24",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -4,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C (TJ = 150 °C)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -3.2,+ "typ": null,+ "max": null,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -3.5,+ "typ": null,+ "max": null,+ "conditions": "Tb, A = 25 °C, note c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.5,+ "typ": null,+ "max": null,+ "conditions": "Tb, A = 70 °C, note c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -10,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.1,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "Tb, A = 25 °C, note c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "Tb, A = 25 °C, note c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "Tb, A = 70 °C, note c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 75,+ "max": 100,+ "conditions": "t = 5 s, note c, d",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 40,+ "max": 50,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 166,+ "conditions": "Steady state, note d",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VDS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "VDS Temperature Coefficient",+ "symbol": "VDS/TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 13.4,+ "max": null,+ "conditions": "ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "VGS(th) Temperature Coefficient",+ "symbol": "VGS(th)/TJ",+ "kind": "temperature_coefficient",+ "unit": "",+ "min": null,+ "typ": 2.9,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.5,+ "typ": null,+ "max": -1.5,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±12 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": -1,+ "max": null,+ "conditions": "VDS = -20 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": -10,+ "max": null,+ "conditions": "VDS = -20 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": -10,+ "max": null,+ "conditions": "VDS -5 V, VGS = -4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.06,+ "max": null,+ "conditions": "VGS = -10 V, ID = -3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.065,+ "max": null,+ "conditions": "VGS = -4.5 V, ID = -2.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.08,+ "max": null,+ "conditions": "VGS = -2.5 V, ID = -2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "VDS = -5 V, ID = -3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 835,+ "max": null,+ "conditions": "VDS = -10 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 180,+ "max": null,+ "conditions": "VDS = -10 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 155,+ "max": null,+ "conditions": "VDS = -10 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VDS = -10 V, VGS = -4.5 V, ID = -3.1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 6.4,+ "max": null,+ "conditions": "VDS = -10 V, VGS = -2.5 V, ID = -3.1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.7,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.4,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "",+ "min": 0.9,+ "typ": 4.4,+ "max": 8.8,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": 33,+ "conditions": "VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 20,+ "max": 30,+ "conditions": "VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 28,+ "max": 42,+ "conditions": "VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": -2.1,+ "max": null,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": -10,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.2,+ "conditions": "IS = -3.1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 23,+ "max": 35,+ "conditions": "IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12,+ "max": 20,+ "conditions": "IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Fall Time",+ "symbol": "ta",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Rise Time",+ "symbol": "tb",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +772,4 @@ "visibility": { "public": true }-}+}