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SI2305B-TP

Public Made by Adom

by adom

MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2305B-TP

MCC Micro Commercial Components · MOSFETs · SOT-23

SI2305B-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the P-channel MOSFET, with gate-source voltage rated ±10 V in the maximum ratings table.
2 SOURCE passive Source terminal of the P-channel MOSFET, with continuous source-drain diode current rated -4.2 A at TC=25°C.
3 DRAIN passive Drain terminal of the P-channel MOSFET, with drain-source voltage rated -20 V and continuous drain current rated -4.2 A.

Key specifications

Parameter Value
Manufacturer MCC Micro Commercial Components
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -10 10 V 1
Drain Current-Continuous ID -4.2 A 1
Drain Current-Pulse IDM -21 A Repetitive rating; pulse width limited by max. junction temperature (Note 2) 1
Power Dissipation PD 1.4 W 1
Operating Junction Temperature Range -55 150 °C 1
Storage Temperature -55 150 °C 1
Thermal Resistance Junction to Ambient 90 °C/W Junction to ambient (Note 1) 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS=0V, ID=-250µA 2
Gate-Threshold Voltage VGS(th) -0.5 -0.9 V VDS=VGS, ID=-250µA 2
Gate-Body Leakage Current IGSS -100 100 nA VGS =±10V, VDS=0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS =-20V, VGS=0V 2
Drain-Source On-Resistance (VGS=-4.5V) RDS(on) 35 60 mΩ VGS=-4.5V, ID=-2.7A 2
Drain-Source On-Resistance (VGS=-2.5V) RDS(on) 46 80 mΩ VGS=-2.5V, ID=-2.7A 2
Drain-Source On-Resistance (VGS=-1.8V) RDS(on) 90 mΩ VGS=-1.8V, ID=-2.7A 2
Total Gate Charge (VGS=-4.5V) Qg 7.8 15 nC VDS=-4V,VGS=-4.5V,ID=-4.1A 2
Total Gate Charge (VGS=-2.5V) Qg 4.5 9 nC VDS=-4V,VGS=-2.5V,ID=-4.1A 2
Gate Resistance Rg 1.4 7 14 Ω f=1MHz 2
Turn-On Delay Time td(on) 13 20 ns VDD=-4V, VGEN=-4.5V, RL=1.2Ω, ID=-3.3A, RG=1Ω 2
Turn-On Rise Time tr 35 53 ns VDD=-4V, VGEN=-4.5V, RL=1.2Ω, ID=-3.3A, RG=1Ω 2
Turn-Off Delay Time td(off) 32 48 ns VDD=-4V, VGEN=-4.5V, RL=1.2Ω, ID=-3.3A, RG=1Ω 2
Turn-Off Fall Time tf 10 20 ns VDD=-4V, VGEN=-4.5V, RL=1.2Ω, ID=-3.3A, RG=1Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD=-4V, VGEN=-8V, RL=1.2Ω, ID=-3.3A, RG=1Ω 2
Turn-On Rise Time tr 11 17 ns VDD=-4V, VGEN=-8V, RL=1.2Ω, ID=-3.3A, RG=1Ω 2
Turn-Off Delay Time td(off) 22 33 ns VDD=-4V, VGEN=-8V, RL=1.2Ω, ID=-3.3A, RG=1Ω 2
Turn-Off Fall Time tf 16 24 ns VDD=-4V, VGEN=-8V, RL=1.2Ω, ID=-3.3A, RG=1Ω 2
Body Diode Voltage VSD -0.8 -1.2 V IF=-3.3A 2

CAD (KiCad official)

  • Symbol: SI2305B-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2305b-tp-etched.step / si2305b-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2305b-tp.step / si2305b-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256 93ad2ca75f0ef5a7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF