component
SI2305 2305
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YONGYUTAI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI2305 2305
YONGYUTAI · MOSFETs · SOT-23
SI2305 2305 from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal; the datasheet limits the gate-source voltage VGSS to ±8 V. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET; the datasheet gives no pin-specific rating and lists the drain-source voltage VDSS as -12 V for the device. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET; the datasheet gives no pin-specific rating and lists the continuous drain current as -4.2 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YONGYUTAI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -12 | V | 1 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -4.2 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -3.4 | A | TA=70℃ | 1 | ||
| Pulsed Drain current | IDM | -10 | A | 1 | |||
| Power Dissipation | PD | 0.35 | W | 1 | |||
| Drain to Source Leakage Current | IDSS | -1 | uA | VDS=-12V, VGS=0V | 2 | ||
| Gate-body Leakage | IGSS | -100 | 100 | nA | VGS=±8V, VDS=0V | 2 | |
| Drain-Source Breakdown Voltage | VDSS | -12 | V | VGS=0V,ID=-250μA | 2 | ||
| Static Drain-Source On-resistance | RDS(ON) | 32 | 53 | mΩ | VGS=-10V, ID=-4.5A | 2 | |
| Static Drain-Source On-resistance | RDS(ON) | 40 | 65 | mΩ | VGS=-4.5V, ID=-4.2A | 2 | |
| Static Drain-Source On-resistance | RDS(ON) | 55 | 100 | mΩ | VGS=-2.5V, ID=-2A | 2 | |
| Static Drain-Source On-resistance | RDS(ON) | 79 | 250 | mΩ | VGS=-1.8V, ID=-1A | 2 | |
| Gate Threshold Voltage | VGS(TH) | -0.5 | -0.9 | V | VDS= VGS, ID=-250uA | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-1.2A, VGS=0 V | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient Air | RθJA | 357 | ℃/W | 1 | |||
| Thermal Resistance Junction to Lead | RθJL | 214 | ℃/W | 1 | |||
| Thermal Resistance Junction to Case | RθJC | 175 | ℃/W | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208. | 1 |
CAD (KiCad official)
- Symbol:
SI2305 2305 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2305-2305-etched.step/si2305-2305-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2305-2305.step/si2305-2305.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YONGYUTAI datasheet (4 pp, sha256
a9be269b1b06d116, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI2305 2305
**YONGYUTAI** · MOSFETs · SOT-23
SI2305 2305 from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal; the datasheet limits the gate-source voltage VGSS to ±8 V. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET; the datasheet gives no pin-specific rating and lists the drain-source voltage VDSS as -12 V for the device. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET; the datasheet gives no pin-specific rating and lists the continuous drain current as -4.2 A at TA=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YONGYUTAI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | -12 | V | | 1 |
| Gate-Source Voltage | VGSS | -8 | | 8 | V | | 1 |
| Continuous Drain Current | ID | | | -4.2 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | -3.4 | A | TA=70℃ | 1 |
| Pulsed Drain current | IDM | | | -10 | A | | 1 |
| Power Dissipation | PD | | | 0.35 | W | | 1 |
| Drain to Source Leakage Current | IDSS | | | -1 | uA | VDS=-12V, VGS=0V | 2 |
| Gate-body Leakage | IGSS | -100 | | 100 | nA | VGS=±8V, VDS=0V | 2 |
| Drain-Source Breakdown Voltage | VDSS | -12 | | | V | VGS=0V,ID=-250μA | 2 |
| Static Drain-Source On-resistance | RDS(ON) | | 32 | 53 | mΩ | VGS=-10V, ID=-4.5A | 2 |
| Static Drain-Source On-resistance | RDS(ON) | | 40 | 65 | mΩ | VGS=-4.5V, ID=-4.2A | 2 |
| Static Drain-Source On-resistance | RDS(ON) | | 55 | 100 | mΩ | VGS=-2.5V, ID=-2A | 2 |
| Static Drain-Source On-resistance | RDS(ON) | | 79 | 250 | mΩ | VGS=-1.8V, ID=-1A | 2 |
| Gate Threshold Voltage | VGS(TH) | -0.5 | | -0.9 | V | VDS= VGS, ID=-250uA | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | IS=-1.2A, VGS=0 V | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction to Ambient Air | RθJA | | 357 | | ℃/W | | 1 |
| Thermal Resistance Junction to Lead | RθJL | | 214 | | ℃/W | | 1 |
| Thermal Resistance Junction to Case | RθJC | | 175 | | ℃/W | | 1 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208. | 1 |
## CAD (KiCad official)
- Symbol: `SI2305 2305`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2305-2305-etched.step` / `si2305-2305-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2305-2305.step` / `si2305-2305.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [YONGYUTAI datasheet](docs/si2305-2305-datasheet.pdf) (4 pp, sha256 `a9be269b1b06d116`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si2305-2305-datasheet.pdf)