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SI2304DDS-T1-BE3

Public Made by Adom

by adom

ElecSuper MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2304DDS-T1-BE3

ElecSuper · MOSFETs · SOT-23-3L

SI2304DDS-T1-BE3 from ElecSuper, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage VGS is rated ±12 V.
2 Source passive Source terminal of the N-channel MOSFET; drain-source voltage BVDSS is rated 30 V.
3 Drain passive Drain terminal of the N-channel MOSFET; continuous drain current ID is 5.8 A at TA=25°C and pulsed drain current IDM is 30 A.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 30 V 2
Gate-Source Voltage VGS -12 12 V 2
Continuous Drain Current ID 5.8 A TA=25°C 2
Continuous Drain Current ID 4.6 A TA=70°C 2
Maximum Power Dissipation PD 1.4 W TA=25°C 2
Maximum Power Dissipation PD 0.9 W TA=70°C 2
Pulsed Drain Current IDM 30 A tp=10μs, Duty Cycle=1% 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 75 90 °C/W Single Operation, t ≤ 10 s 2
Junction-to-Case Thermal Resistance RθJC 43 70 °C/W Single Operation, Steady State 2
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=24V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 3
Gate Threshold Voltage VGS(TH) 0.5 1 1.3 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 21 28 mΩ VGS=10V, ID=5.8A 3
Drain-to-source On-resistance RDS(on) 25 33 mΩ VGS=4.5V, ID=5.0A 3
Drain-to-source On-resistance RDS(on) 33 52 mΩ VGS=2.5V, ID=4.0A 3
Forward Trans conductance gFS 7.8 15 S VDS=5.0V, ID=5.8A 3
Forward Voltage VSD 0.75 1.5 V VGS=0V, IS=1.0A 3
Input Capacitance CISS 550 pF VGS=0V, f=1MHz, VDS=10V 3
Output Capacitance COSS 62 pF VGS=0V, f=1MHz, VDS=10V 3
Reverse Transfer Capacitance CRSS 48 pF VGS=0V, f=1MHz, VDS=10V 3
Total Gate Charge QG(TOT) 6.7 nC VGS=4.5V, VDS=10V, ID=5.8A 3
Threshold Gate Charge QG(TH) 0.75 nC VGS=4.5V, VDS=10V, ID=5.8A 3
Gate-to-Source Charge QGS 1.65 nC VGS=4.5V, VDS=10V, ID=5.8A 3
Gate-to-Drain Charge QGD 1.78 nC VGS=4.5V, VDS=10V, ID=5.8A 3
Turn-On Delay Time td(ON) 3.8 ns VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 3
Rise Time tr 13 ns VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 3
Turn-Off Delay Time td(OFF) 14.2 ns VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 3
Fall Time tf 2 ns VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 3

CAD (KiCad official)

  • Symbol: SI2304DDS-T1-BE3
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: si2304dds-t1-be3-etched.step / si2304dds-t1-be3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2304dds-t1-be3.step / si2304dds-t1-be3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (7 pp, sha256 845300971e5ca0c9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF