component

SI2303CDS-T1-GE3

Public Made by Adom

by adom

Vishay Intertech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorssi2303cds-t1-ge3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
si2303cds-t1-ge3 / README.md
History Download
Ray Publish 0.1.0 735b904 4h ago

SI2303CDS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23(TO-236)

SI2303CDS-T1-GE3 from Vishay Intertech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; the gate-source voltage is rated at ±20 V (absolute maximum).
2 S passive Source of the P-channel MOSFET; the drain-source voltage is rated at -30 V (absolute maximum).
3 D passive Drain of the P-channel MOSFET; continuous drain current is -2.7 A at TC = 25 °C, and the junction-to-foot (drain) thermal resistance is given for this pin.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23(TO-236)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -2.7 A TC = 25 °C 1
Continuous Drain Current ID -2.2 A TC = 70 °C 1
Continuous Drain Current ID -1.9 A TA = 25 °C (surface mounted, notes b, c) 1
Continuous Drain Current ID -1.5 A TA = 70 °C (surface mounted, notes b, c) 1
Pulsed Drain Current IDM -10 A 1
Continuous Source-Drain Diode Current IS -1.75 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -0.83 A TA = 25 °C (notes b, c) 1
Avalanche Current IAS -5 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 1.25 mJ 1
Maximum Power Dissipation PD 2.3 W TC = 25 °C 1
Maximum Power Dissipation PD 1.5 W TC = 70 °C 1
Maximum Power Dissipation PD 1 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.7 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 80 120 °C/W t ≤ 5 s, surface mounted (notes b, d) 1
Maximum Junction-to-Ambient RthJA 160 °C/W steady state, surface mounted (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 35 55 °C/W steady state 1
Drain-Source Breakdown Voltage VDS -30 V VDS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -10 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.158 0.19 Ω VGS = -10 V, ID = -1.9 A 2
Drain-Source On-State Resistance RDS(on) 0.275 0.33 Ω VGS = -4.5 V, ID = -1.4 A 2
Gate Resistance Rg 1.7 8.5 17 Ω f = 1 MHz 2
Rise Time tr 11 18 ns VDD = -15 V, RL = 10 Ω, ID = -1.5 A, VGEN = -10 V, RG = 1 Ω 2
Turn-Off Delay Time td(off) 11 18 ns VDD = -15 V, RL = 10 Ω, ID = -1.5 A, VGEN = -10 V, RG = 1 Ω 2
Fall Time tf 8 16 ns VDD = -15 V, RL = 10 Ω, ID = -1.5 A, VGEN = -10 V, RG = 1 Ω 2
Turn-On Delay Time td(on) 36 44 ns VDD = -15 V, RL = 10 Ω, ID ≅ -1.5 A, VGEN = -4.5 V, RG = 1 Ω 2
Rise Time tr 37 45 ns VDD = -15 V, RL = 10 Ω, ID ≅ -1.5 A, VGEN = -4.5 V, RG = 1 Ω 2
Turn-Off Delay Time td(off) 12 18 ns VDD = -15 V, RL = 10 Ω, ID ≅ -1.5 A, VGEN = -4.5 V, RG = 1 Ω 2
Fall Time tf 9 14 ns VDD = -15 V, RL = 10 Ω, ID ≅ -1.5 A, VGEN = -4.5 V, RG = 1 Ω 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -1.5 A 2
Body Diode Reverse Recovery Time trr 17 26 ns IF = -1.5 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 9 14 nC IF = -1.5 A, di/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI2303CDS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: si2303cds-t1-ge3-etched.step / si2303cds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2303cds-t1-ge3.step / si2303cds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 906bb5e9cb5bdcb1, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF