# SI2302DS-T1-GE3-ES

**ElecSuper** · MOSFETs · SOT-23

SI2302DS-T1-GE3-ES from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET, with a gate-source voltage limit of VGS ±12 V. |
| 2 | Source | passive | Source terminal of the N-channel enhancement MOSFET, with a drain-source breakdown voltage (BVDSS) of 20 V. |
| 3 | Drain | passive | Drain terminal of the N-channel enhancement MOSFET, rated for a continuous drain current of 3.3 A at TA=25℃ and a pulsed drain current of 13.2 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS |  |  | 20 | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 3.3 | A | TA=25℃ | 2 |
| Continuous Drain Current | ID |  |  | 2.1 | A | TA=100℃ | 2 |
| Maximum Power Dissipation | PD |  |  | 0.9 | mW |  | 2 |
| Pulsed Drain Current | IDM |  |  | 13.2 | A |  | 2 |
| Operating Junction Temperature | TJ |  |  | 150 | °C |  | 2 |
| Lead Temperature | TL |  |  | 260 | °C |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA |  | 138 |  | °C/W | Single operation | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V, ID=250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=20V, VGS=0V | 3 |
| Gate-to-source Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 3 |
| Gate Threshold Voltage | VGS(TH) | 0.4 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 45 | 55 | mΩ | VGS=4.5V, ID=3A | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 62 | 85 | mΩ | VGS=2.5V, ID=2A | 3 |
| Forward Voltage | VSD |  |  | 1.5 | V | VGS=0V, IS=3A | 3 |

## CAD (KiCad official)

- Symbol: `SI2302DS-T1-GE3-ES`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2302ds-t1-ge3-es-etched.step` / `si2302ds-t1-ge3-es-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2302ds-t1-ge3-es.step` / `si2302ds-t1-ge3-es.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ElecSuper datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8608750289512255488) (7 pp, sha256 `b448ab80cbf2fe8a`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2302ds-t1-ge3-es-datasheet.pdf)