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SI2302CDS-T1-GE3-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2302CDS-T1-GE3-MS
MSKSEMI · MOSFETs · SOT-23
SI2302CDS-T1-GE3-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the N-channel MOSFET, with VGS rated ±12 V and threshold VGS(th) 0.4 V min to 1 V max at ID=250uA. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source current is 3 A max. |
| 3 | D | passive | Drain of the N-channel MOSFET; VDS is rated 20 V and continuous drain current is 3 A at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Drain Current, Continuous | ID | 3 | A | TC=25℃ | 2 | ||
| Drain Current, Continuous | ID | 2 | A | TC=100℃ | 2 | ||
| Drain Current, Pulsed | IDM | 16 | A | 2 | |||
| Power Dissipation | PD | 1.56 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to ambient | RθJA | 80 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=20V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=16V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40 | 55 | mΩ | VGS=4.5V, ID=2A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 55 | 75 | mΩ | VGS=2.5V, ID=1A | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.5 | 1 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current | IS | 3 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | 6 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
SI2302CDS-T1-GE3-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2302cds-t1-ge3-ms-etched.step/si2302cds-t1-ge3-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2302cds-t1-ge3-ms.step/si2302cds-t1-ge3-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
ac3446b357a9d8cc, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).