# Si2302CDS-T1-E3-HXY

**HXY MOSFET** · MOSFETs · SOT-23

Si2302CDS-T1-E3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; absolute maximum VGS is ±12V, and the device is specified for gate drive down to 2.5V. |
| 2 | D | passive | Drain of the N-channel MOSFET; absolute maximum VDS is 20V and continuous drain current ID is 2.3A. |
| 3 | S | passive | Source of the N-channel MOSFET; diode forward current IS is rated at a maximum of 3.3A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `Si2302CDS-T1-E3-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2302cds-t1-e3-hxy-etched.step` / `si2302cds-t1-e3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2302cds-t1-e3-hxy.step` / `si2302cds-t1-e3-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590909224220106752) (6 pp, sha256 `227d097c1d2ef473`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2302cds-t1-e3-hxy-datasheet.pdf)