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SI2302CDS-T1-E3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSI2302CDS-T1-E3
Vishay Intertech · MOSFETs · SOT-23
SI2302CDS-T1-E3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of VGS = ±8 V. |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet gives a continuous source (diode conduction) current limit of IS = 0.72 A at TA = 25 °C (steady state 0.6 A). |
| 3 | D | passive | Drain of the N-channel MOSFET; the drain-source voltage is limited to VDS = 20 V, and the drain pin also serves as the thermal connection from the package to the PC board. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 0.4 | 0.85 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.045 | 0.057 | Ω | VGS = 4.5 V, ID = 3.6 A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.056 | 0.075 | Ω | VGS = 2.5 V, ID = 3.1 A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1.2 | V | IS = 0.95 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 3.5 | 5.5 | nC | VDS = 10 V, VGS = 4.5 V, ID = 3.6 A | 2 | |
| Gate Resistance | Rg | 2 | 4 | 8 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 8 | 15 | ns | VDD = 10 V, RL = 2.78 Ω, ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 7 | 15 | ns | VDD = 10 V, RL = 2.78 Ω, ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = 10 V, RL = 2.78 Ω, ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 7 | 15 | ns | VDD = 10 V, RL = 2.78 Ω, ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 8.5 | 15 | ns | IF = 3.6 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 2 | 4 | nC | IF = 3.6 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | 2.9 | A | TJ = 150 °C, TA = 25 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current | ID | 2.6 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current | ID | 2.3 | A | TJ = 150 °C, TA = 70 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current | ID | 2.1 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 0.72 | A | TA = 25 °C, t ≤ 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 0.6 | A | TA = 25 °C, steady state | 1 | ||
| Power Dissipation | PD | 0.86 | W | TA = 25 °C, t ≤ 5 s | 1 | ||
| Power Dissipation | PD | 0.71 | W | TA = 25 °C, steady state | 1 | ||
| Power Dissipation | PD | 0.55 | W | TA = 70 °C, t ≤ 5 s | 1 | ||
| Power Dissipation | PD | 0.46 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 120 | 145 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 140 | 175 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot | RthJF | 62 | 78 | °C/W | Steady State | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pattern, a plane of copper overlies the drain pin and provides | 6 |
CAD (KiCad official)
- Symbol:
SI2302CDS-T1-E3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2302cds-t1-e3-etched.step/si2302cds-t1-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2302cds-t1-e3.step/si2302cds-t1-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
dc7fa9c8456d8654, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).