# SI2302AI-MS

**MSKSEMI** · MOSFETs · SOT-23

SI2302AI-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of 0.5 V min to 1.2 V max at 250 µA. |
| 2 | S | passive | Source; continuous drain current up to 3.0 A, body diode forward current IS up to 3 A. |
| 3 | D | passive | Drain; drain-source voltage rated 20 V, continuous drain current 3.0 A and pulsed 12 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 |  | V | VGS=0V ID=250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=20V,VGS=0V | 3 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=± 12V,VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS ,ID=250μA | 3 |
| Drain-Source On-State Resistance at VGS=2.5V | RDS(ON) |  | 42 | 80 | mΩ | VGS=2.5V, ID=2.8A | 3 |
| Drain-Source On-State Resistance at VGS=4.5V | RDS(ON) |  | 35 | 50 | mΩ | VGS=4.5V, ID=3A | 3 |
| Total Gate Charge | Qg |  | 2.7 | 5 | nC | VDS=10V,ID=3A, VGS=4.5V | 3 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=3A | 3 |
| Diode Forward Current | IS |  |  | 3 | A |  | 3 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 3 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 3 |
| Drain Current-Continuous | ID |  |  | 3 | A |  | 3 |
| Drain Current-Pulsed | IDM |  |  | 12 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 3 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W |  | 3 |
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 |  | 150 | ℃ |  | 3 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 156 |  | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 3 |

## CAD (KiCad official)

- Symbol: `SI2302AI-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2302ai-ms-etched.step` / `si2302ai-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2302ai-ms.step` / `si2302ai-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588945260763860992) (5 pp, sha256 `7583b2d48efbb852`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2302ai-ms-datasheet.pdf)