component
SI2302
Public Made by Adomby adom
YONGYUTAI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2302: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ SI2302 from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source threshold voltage | VGS(th) | 0.5 | 0.8 | 1 | V | VDS = VGS, ID = -250µA | 2 |+| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±10V | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS = 16V, VGS = 0V | 2 |+| Drain-source on-state resistance | RDS(on) | | 0.045 | 0.05 | Ω | VGS = 4.5V, ID = 3A | 2 |+| Drain-source on-state resistance | RDS(on) | | 0.055 | 0.065 | Ω | VGS = 2.5V, ID = 2A | 2 |+| Forward transconductance | gfs | 8 | | | S | VDS = 5V, ID = 3A | 2 |+| Body diode voltage | VSD | | 0.7 | 1.3 | V | IS = 1.0A | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID = -250µA | 2 |+| Drain-Source Voltage | VDS | | | 20 | V | Ta = 25℃ | 1 |+| Gate-Source Voltage | VGS | -10 | | 10 | V | Ta = 25℃ | 1 |+| Continuous Drain Current | ID | | | 3 | A | Ta = 25℃ | 1 |+| Pulsed Drain Current | IDM | | | 10 | A | Pulse width ≤ 300µs, duty cycle ≤ 2% | 1 |+| Continuous Source-Drain Diode Current | IS | | | 1 | A | Ta = 25℃ | 1 |+| Maximum Power Dissipation | PD | | | 1 | W | Ta = 25℃ | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 156 | ℃/W | t ≤ 5s | 1 |+ ## CAD (KiCad official) - Symbol: `SI2302`
page.json+212−1@@ -149,6 +149,217 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6f3dc80d09595028",+ "rows": [+ {+ "name": "Gate-source threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.5,+ "typ": 0.8,+ "max": 1,+ "conditions": "VDS = VGS, ID = -250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0V, VGS = ±10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 16V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.045,+ "max": 0.05,+ "conditions": "VGS = 4.5V, ID = 3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.055,+ "max": 0.065,+ "conditions": "VGS = 2.5V, ID = 2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 8,+ "typ": null,+ "max": null,+ "conditions": "VDS = 5V, ID = 3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.7,+ "max": 1.3,+ "conditions": "IS = 1.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = -250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Ta = 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "Ta = 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "Ta = 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "Pulse width ≤ 300µs, duty cycle ≤ 2%",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Ta = 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Ta = 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 156,+ "conditions": "t ≤ 5s",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +401,4 @@ "visibility": { "public": true }-}+}