component
SI2302
Public Made by Adomby adom
YONGYUTAI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2302
YONGYUTAI · MOSFETs · SOT-23
SI2302 from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±10 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; the datasheet gives a continuous source-drain diode current rating of 1.0 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; the datasheet gives a drain-source voltage rating of 20 V and a continuous drain current of 3.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YONGYUTAI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source threshold voltage | VGS(th) | 0.5 | 0.8 | 1 | V | VDS = VGS, ID = -250µA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±10V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 16V, VGS = 0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.045 | 0.05 | Ω | VGS = 4.5V, ID = 3A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.055 | 0.065 | Ω | VGS = 2.5V, ID = 2A | 2 | |
| Forward transconductance | gfs | 8 | S | VDS = 5V, ID = 3A | 2 | ||
| Body diode voltage | VSD | 0.7 | 1.3 | V | IS = 1.0A | 2 | |
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = -250µA | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | Ta = 25℃ | 1 | ||
| Gate-Source Voltage | VGS | -10 | 10 | V | Ta = 25℃ | 1 | |
| Continuous Drain Current | ID | 3 | A | Ta = 25℃ | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | Pulse width ≤ 300µs, duty cycle ≤ 2% | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1 | A | Ta = 25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | Ta = 25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 156 | ℃/W | t ≤ 5s | 1 |
CAD (KiCad official)
- Symbol:
SI2302 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2302-etched.step/si2302-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2302.step/si2302.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YONGYUTAI datasheet (6 pp, sha256
6f3dc80d09595028, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).