component
SI2302-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
| si2302-tp-etched.glb | 8d ago |
| si2302-tp-etched.step | 8d ago |
| si2302-tp-hero.glb | 8d ago |
| si2302-tp-hero.overlay.json | 8d ago |
| si2302-tp.glb | 8d ago |
| si2302-tp.kicad_mod | 8d ago |
| si2302-tp.kicad_sym | 8d ago |
| si2302-tp.lbr | 8d ago |
| si2302-tp.step | 8d ago |
SI2302-TP
MCC Micro Commercial Components · MOSFETs · SOT-23
SI2302-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the N-channel MOSFET; gate-source voltage is rated at 8 V maximum (VGS), and the gate threshold is 0.65 to 1.2 V at VGS = VDS, ID = 50 µA. |
| 2 | SOURCE | passive | Source of the N-channel MOSFET; body diode forward current is rated at 0.94 A with a forward voltage of 0.94 A test point at VGS = 0 V, IS = 0.94 A, and the source is the reference for the 8 V gate-source rating. |
| 3 | DRAIN | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 20 V and continuous drain current at 3 A, with pulsed drain current at 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 10µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.65 | 1.2 | V | VGS = VDS, ID = 50µA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 8V, VDS = 0V | 2 | ||
| Gate Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -8V, VDS = 0V | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 55 | 72 | mΩ | VGS = 4.5V, ID = 3.6A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 82 | 110 | mΩ | VGS = 2.5V, ID = 3.1A | 2 | |
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Drain Current-Continuous | ID | 3 | A | 1 | |||
| Drain Current-Pulsed | IDM | 10 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Gate-Source Voltage | VGS | 8 | V | 1 | |||
| Total Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | RJA | 100 | /W | Surface mounted on FR4 Board, t < 10 sec | 1 |
CAD (KiCad official)
- Symbol:
SI2302-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2302-tp-etched.step/si2302-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2302-tp.step/si2302-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (5 pp, sha256
d94e4087753b281a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).