# SI2301CDS-T1-GE3-MS

**MSKSEMI** · MOSFETs · SOT-23

SI2301CDS-T1-GE3-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated at ±12 V maximum, with a threshold of -0.3 V min to -1.1 V max at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current is rated -3.0 A and pulsed -13 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is rated -20 V maximum and continuous drain current -3.0 A at TC=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Drain Current - Continuous | ID |  |  | -3 | A | TC=25℃ | 2 |
| Drain Current - Continuous | ID |  |  | -2.1 | A | TC=100℃ | 2 |
| Drain Current - Pulsed | IDM |  |  | -13 | A |  | 2 |
| Power Dissipation | PD |  |  | 1.56 | W | TC=25℃ | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance Junction to ambient | RθJA |  |  | 80 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current | IDSS |  |  | -10 | uA | VDS=-16V, VGS=0V, TJ=125℃ | 3 |
| Gate-Source Leakage Current | IGSS | -10 |  | 10 | uA | VGS=±12V, VDS=0V | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 70 | 85 | mΩ | VGS=-4.5V, ID=-3A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 95 | 120 | mΩ | VGS=-2.5V, ID=-2A | 3 |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.65 | -1.1 | V | VGS=VDS, ID=-250uA | 3 |
| Continuous Source Current | IS |  |  | -3 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current | ISM |  |  | -13 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `SI2301CDS-T1-GE3-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2301cds-t1-ge3-ms-etched.step` / `si2301cds-t1-ge3-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2301cds-t1-ge3-ms.step` / `si2301cds-t1-ge3-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8555434957698674688) (7 pp, sha256 `9ba662ec05b1fbb0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2301cds-t1-ge3-ms-datasheet.pdf)