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SI2301CDS-T1-GE3-HXY

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HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2301CDS-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOT-23

SI2301CDS-T1-GE3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a Gate-Source voltage limit of ±12 V and a threshold of -0.4 to -1 V (typ -0.7 V).
2 S passive Source of the P-channel MOSFET, the reference terminal for VGS and the body-diode anode side, with continuous drain current rated -2.3 A.
3 D passive Drain of the P-channel MOSFET, rated for a Drain-Source voltage of -20 V and -2.3 A continuous (-9 A pulsed).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID -2.3 A 1
Drain Current-Pulsed IDM -9 A Note 1 1
Maximum Power Dissipation PD 0.65 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 178 ℃/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 130 140 mΩ VGS=-4.5V, ID=-2A 2
Drain-Source On-State Resistance RDS(ON) 152 170 mΩ VGS=-2.5V, ID=-1.8A 2
Forward Transconductance gFS 4 S VDS=-5V, ID=-2A 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V, VGS=0V 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-2A 2
Diode Forward Current IS -2 A 2
Input Capacitance Ciss 285 PF VDS=-10V, VGS=0V, F=1.0MHz 2
Output Capacitance Coss 58 PF 2
Reverse Transfer Capacitance Crss 32 PF 2
Turn-on Delay Time td(on) 9.8 nS VDD=-10V, RL=5Ω, VGS=-4.5V, RGEN=3Ω 2
Turn-on Rise Time tr 4.9 nS 2
Turn-Off Delay Time td(off) 20.5 nS 2
Turn-Off Fall Time tf 7 nS 2
Total Gate Charge Qg 2.9 nC VDS=-10V, ID=-2A, VGS=-4.5V 2
Gate-Source Charge Qgs 0.45 nC 2
Gate-Drain Charge Qgd 0.75 nC 2

CAD (KiCad official)

  • Symbol: SI2301CDS-T1-GE3-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2301cds-t1-ge3-hxy-etched.step / si2301cds-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2301cds-t1-ge3-hxy.step / si2301cds-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 d0b27d3b0b170f76, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF