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SI2301CDS-T1-BE3

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Vishay Intertech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI2301CDS-T1-BE3

Vishay Intertech · MOSFETs · SOT-23(TO-236)

SI2301CDS-T1-BE3 from Vishay Intertech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with absolute maximum gate-source voltage of ±8 V and threshold of -0.4 to -1 V.
2 S passive Source of the P-channel MOSFET, with continuous source-drain diode current of -1.3 A at TC = 25 °C.
3 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and pulsed drain current of -10 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -8 8 V TA = 25 °C 1
Continuous Drain Current ID -3.1 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -2.5 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -2.3 A TJ = 150 °C, TA = 25 °C, b, c 1
Continuous Drain Current ID -1.8 A TJ = 150 °C, TA = 70 °C, b, c 1
Pulsed Drain Current IDM -10 A 1
Continuous Source-Drain Diode Current IS -1.3 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -0.72 A TA = 25 °C, b, c 1
Maximum Power Dissipation PD 1.6 W TC = 25 °C 1
Maximum Power Dissipation PD 1 W TC = 70 °C 1
Maximum Power Dissipation PD 0.86 W TA = 25 °C, b, c 1
Maximum Power Dissipation PD 0.55 W TA = 70 °C, b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 120 145 °C/W Surface mounted on 1" x 1" FR4 board, t = 5 s 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 62 78 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = - 250 µA 2
VDS Temperature Coefficient ΔVDS/TJ -18 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 2.2 mV/°C ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.4 -1 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -6 A VDS ≤ - 5 V, VGS = - 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.09 0.112 Ω VGS = - 4.5 V, ID = - 2.8 A 2
Drain-Source On-State Resistance RDS(on) 0.11 0.142 Ω VGS = - 2.5 V, ID = - 2.0 A 2
Forward Transconductance gfs 9.5 S VDS = - 5 V, ID = - 2.8 A 2
Input Capacitance Ciss 405 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 75 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 5.5 10 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A 2
Total Gate Charge Qg 3.3 6 nC VDS = - 10 V, VGS = - 2.5 V, ID = - 3 A 2
Gate-Source Charge Qgs 0.7 nC 2
Gate-Drain Charge Qgd 1.3 nC 2
Gate Resistance Rg 6 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 11 20 ns VDD = - 10 V, RL = 10 Ω, ID = - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 35 60 ns VDD = - 10 V, RL = 10 Ω, ID = - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 30 50 ns VDD = - 10 V, RL = 10 Ω, ID = - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 10 20 ns VDD = - 10 V, RL = 10 Ω, ID = - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -1.3 A TC = 25 °C 2
Pulse Diode Forward Current ISM -10 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = - 0.7 A 2
Body Diode Reverse Recovery Time trr 30 50 ns IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 25 50 nC IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 15 ns IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 15 ns IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI2301CDS-T1-BE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: si2301cds-t1-be3-etched.step / si2301cds-t1-be3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2301cds-t1-be3.step / si2301cds-t1-be3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 62be0c436df2b5d7, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF