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Si2301BDS-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSi2301BDS-HXY
HXY MOSFET · MOSFETs · SOT-23
Si2301BDS-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±12 V maximum and threshold VGS(th) of -0.4 V min to -1 V max at ID=-250μA. |
| 2 | S | passive | Source; the P-channel source terminal, with continuous drain current rated -3 A. |
| 3 | D | passive | Drain; rated for VDS of -20 V maximum, continuous ID of -3 A and pulsed IDM of -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | -24 | V | VGS=0V ID=-250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) | 60 | 80 | mΩ | VGS=-4.5V, ID=-3A | 2 | |
| Drain-Source On-State Resistance (VGS=-2.5V) | RDS(ON) | 85 | 103 | Ω | VGS=-2.5V, ID=-2A | 2 | |
| Forward Transconductance | gFS | 5 | S | VDS=-5V,ID=-2A | 2 | ||
| Total Gate Charge | Qg | 3.3 | 12 | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=1.3A | 2 | ||
| Diode Forward Current | IS | -3 | A | 2 | |||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | -3 | A | 1 | |||
| Drain Current-Pulsed | IDM | -10 | A | Note 1: Repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | ℃/W | Note 2: Surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
Si2301BDS-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2301bds-hxy-etched.step/si2301bds-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2301bds-hxy.step/si2301bds-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
460660361abd5ae0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).