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SI2301B
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YONGYUTAI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI2301B
YONGYUTAI · MOSFETs · SOT-23
SI2301B from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of -0.3 V min, -0.7 V typ and -1.5 V max at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current is -2.5 A max and pulsed source current is -10 A max. |
| 3 | D | passive | Drain, the single lead on one side of the package; VDS is -20 V max, continuous ID is -2.5 A at TC=25℃ and pulsed IDM is -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YONGYUTAI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current - Continuous | ID | -2.5 | A | TC=25℃ | 1 | ||
| Drain Current - Continuous | ID | -1.6 | A | TC=100℃ | 1 | ||
| Drain Current - Pulsed | IDM1 | -10 | A | 1 | |||
| Power Dissipation | PD | 1 | W | TC=25℃ | 1 | ||
| Power Dissipation - Derate above 25℃ | 0.008 | W/℃ | above 25℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | Tj | -55 | 150 | ℃ | 1 | ||
| Drain to Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | μA | VDS=-20V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 80 | 104 | mΩ | VGS=-4.5V, ID=-2.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 110 | 154 | mΩ | VGS=-2.5V, ID=-1.5A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.7 | -1.5 | V | VDS=VGS, ID=-250μA | 2 |
| Continuous Source Current | IS | -2.5 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -10 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-2.5A, TJ=25℃ | 2 | ||
| Total Gate Charge | Qg | 2.9 | nC | VDS=-10V, VGS=-4.5V, ID=-2.5A | 2 | ||
| Gate-Source Charge | Qgs | 0.45 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 0.75 | nC | 2 | |||
| Turn-on Delay Time | Td(on) | 9.8 | nS | VDD=-10V, VGEN=-4.5V, RGEN=3Ω, RL=5Ω | 2 | ||
| Turn-on Rise Time | Tr | 4.9 | nS | 2 | |||
| Turn-off Delay Time | Td(off) | 20.5 | nS | 2 | |||
| Turn-off Fall Time | Tf | 7 | nS | 2 | |||
| Input Capacitance | Ciss | 248 | pF | VDS=-10V, VGS=0V, F=1MHz | 2 | ||
| Output Capacitance | Coss | 42 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 31 | pF | 2 | |||
| Thermal Resistance Junction to Ambient | RθJA | 125 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SI2301B - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2301b-etched.step/si2301b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2301b.step/si2301b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YONGYUTAI datasheet (5 pp, sha256
8d5552a9356a0c14, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI2301B
**YONGYUTAI** · MOSFETs · SOT-23
SI2301B from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of -0.3 V min, -0.7 V typ and -1.5 V max at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current is -2.5 A max and pulsed source current is -10 A max. |
| 3 | D | passive | Drain, the single lead on one side of the package; VDS is -20 V max, continuous ID is -2.5 A at TC=25℃ and pulsed IDM is -10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YONGYUTAI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Drain Current - Continuous | ID | | | -2.5 | A | TC=25℃ | 1 |
| Drain Current - Continuous | ID | | | -1.6 | A | TC=100℃ | 1 |
| Drain Current - Pulsed | IDM1 | | | -10 | A | | 1 |
| Power Dissipation | PD | | | 1 | W | TC=25℃ | 1 |
| Power Dissipation - Derate above 25℃ | | | | 0.008 | W/℃ | above 25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | Tj | -55 | | 150 | ℃ | | 1 |
| Drain to Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | μA | VDS=-20V, VGS=0V, TJ=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 80 | 104 | mΩ | VGS=-4.5V, ID=-2.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 110 | 154 | mΩ | VGS=-2.5V, ID=-1.5A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.7 | -1.5 | V | VDS=VGS, ID=-250μA | 2 |
| Continuous Source Current | IS | | | -2.5 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -10 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-2.5A, TJ=25℃ | 2 |
| Total Gate Charge | Qg | | 2.9 | | nC | VDS=-10V, VGS=-4.5V, ID=-2.5A | 2 |
| Gate-Source Charge | Qgs | | 0.45 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 0.75 | | nC | | 2 |
| Turn-on Delay Time | Td(on) | | 9.8 | | nS | VDD=-10V, VGEN=-4.5V, RGEN=3Ω, RL=5Ω | 2 |
| Turn-on Rise Time | Tr | | 4.9 | | nS | | 2 |
| Turn-off Delay Time | Td(off) | | 20.5 | | nS | | 2 |
| Turn-off Fall Time | Tf | | 7 | | nS | | 2 |
| Input Capacitance | Ciss | | 248 | | pF | VDS=-10V, VGS=0V, F=1MHz | 2 |
| Output Capacitance | Coss | | 42 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 31 | | pF | | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | 125 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `SI2301B`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2301b-etched.step` / `si2301b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2301b.step` / `si2301b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [YONGYUTAI datasheet](docs/si2301b-datasheet.pdf) (5 pp, sha256 `8d5552a9356a0c14`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si2301b-datasheet.pdf)