component
SI2301AI-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2301AI-MS
MSKSEMI · MOSFETs · SOT-23
SI2301AI-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12V, with RDS(ON) < 110mΩ at VGS=-4.5V and < 140mΩ at VGS=-2.5V. |
| 2 | S | passive | Source of the P-channel MOSFET; drain-source voltage rating is -20V and continuous drain current is -3A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS = -20V, continuous ID = -3A and pulsed ID up to -10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | -24 | V | VGS=0V ID=-250μA | 3 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=-20V,VGS=0V | 3 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | A | VGS=±12V,VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS ,ID=-250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 64 | 110 | mΩ | VGS=-4.5V, ID=-3A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 89 | 140 | mΩ | VGS=-2.5V, ID=-2A | 3 | |
| Forward Transconductance | gFS | 5 | S | VDS=-5V,ID=-2A | 3 | ||
| Total Gate Charge | Qg | 3.3 | 12 | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 3 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=1.3A | 3 | ||
| Diode Forward Current | IS | -3 | A | 3 | |||
| Drain-Source Voltage | VDS | -20 | V | TA=25℃ | 3 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 3 | |
| Drain Current - Continuous | ID | -3 | A | TA=25℃ | 3 | ||
| Drain Current - Pulsed | IDM | -10 | A | TA=25℃, Note 1 | 3 | ||
| Maximum Power Dissipation | PD | 1 | W | TA=25℃ | 3 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 3 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec | 3 | ||
| Input Capacitance | Ciss | 405 | pF | VDS=-10V,VGS=0V, F=1.0MHz | 3 | ||
| Output Capacitance | Coss | 75 | pF | VDS=-10V,VGS=0V, F=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 55 | pF | VDS=-10V,VGS=0V, F=1.0MHz | 3 | ||
| Turn-on Delay Time | td(on) | 11 | nS | VDD=-10V,ID=-1A,VGS=-4.5V,RGEN=10Ω | 3 | ||
| Turn-on Rise Time | tr | 35 | nS | VDD=-10V,ID=-1A,VGS=-4.5V,RGEN=10Ω | 3 | ||
| Turn-Off Delay Time | td(off) | 30 | nS | VDD=-10V,ID=-1A,VGS=-4.5V,RGEN=10Ω | 3 | ||
| Turn-Off Fall Time | tf | 10 | nS | VDD=-10V,ID=-1A,VGS=-4.5V,RGEN=10Ω | 3 | ||
| Gate-Source Charge | Qgs | 0.7 | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 3 | ||
| Gate-Drain Charge | Qgd | 1.3 | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 3 |
CAD (KiCad official)
- Symbol:
SI2301AI-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2301ai-ms-etched.step/si2301ai-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2301ai-ms.step/si2301ai-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
2b200bf9235b2faf, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).