# SI2300

**GOODWORK** · MOSFETs · SOT-23

SI2300 from GOODWORK, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; the gate-source voltage VGS is rated ±12 V maximum. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; the maximum body-diode continuous current IS is rated 2 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; the continuous drain current ID is rated 6 A with a drain-source voltage VDS of 20 V maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 25 | A |  | 1 |
| Maximum Body-Diode Continuous Current | IS |  |  | 2 | A |  | 1 |
| Power Dissipation | PD |  |  | 1.25 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 357 | ℃/W |  | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Gate-source leakage current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±12V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS = 16V, VGS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-source on-state resistance | RDS(on) |  | 22 | 27 | mΩ | VGS = 4.5V, ID = 5.0A | 2 |
| Diode forward voltage | VSD |  | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 35 |  | mΩ | VGS = 2.5V, ID = 4.0A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 73 |  | mΩ | VGS = 1.8V, ID = 2.0A | 2 |
| Forward transconductance | gfS |  | 4 |  | S | VDS = 5V, ID = 3.8A | 2 |
| Input capacitance | Ciss |  | 630 |  | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 |
| Output capacitance | Coss |  | 164 |  | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 137 |  | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 |
| Gate resistance | Rg |  | 1.5 |  | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 |
| Turn-on delay time | td(on) |  | 5.5 |  | ns | VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω | 2 |
| Rise time | tr |  | 14 |  | ns | VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω | 2 |
| Turn-off delay time | td(off) |  | 29 |  | ns | VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω | 2 |
| Fall time | tf |  | 10.2 |  | ns | VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω | 2 |

## CAD (KiCad official)

- Symbol: `SI2300`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2300-etched.step` / `si2300-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2300.step` / `si2300.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOODWORK datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590917224779894784) (3 pp, sha256 `8c100d98a123ec28`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2300-datasheet.pdf)