# SI1972DH-T1-GE3-VB

**VBsemi Elec** · MOSFETs · SC-70-6

SI1972DH-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1 (VDS max 20 V). |
| 2 | G1 | input | Gate of N-channel MOSFET 1 (VGS max ±12 V, threshold 0.5 to 2.0 V). |
| 3 | D2 | passive | Drain of N-channel MOSFET 2 (VDS max 20 V, pulsed drain current up to 8 A). |
| 4 | S2 | passive | Source of N-channel MOSFET 2 (VDS max 20 V). |
| 5 | G2 | input | Gate of N-channel MOSFET 2 (VGS max ±12 V, threshold 0.5 to 2.0 V). |
| 6 | D1 | passive | Drain of N-channel MOSFET 1 (VDS max 20 V, pulsed drain current up to 8 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TA = 25 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 8 | A | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA |  | 130 | 170 | °C/W | t ≤ 5 s, surface mounted on 1" x 1" FR4 | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF |  | 80 | 100 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | VDS | 20 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 |  | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -25 |  | 25 | µA | VDS = 0 V, VGS = ± 8 V | 2 |
| Gate-Source Leakage | IGSS |  |  | 1 | µA | VDS = 0 V, VGS = ± 4.5 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 4 |  |  | A | VDS ≤ 5 V, VGS = 4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.086 | Ω | VGS = 4.5 V, ID = 1 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.11 | Ω | VGS = 2.5 V, ID = 1 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.18 | Ω | VGS = 1.8 V, ID = 0.2 A | 2 |
| Gate Resistance | Rg | 0.4 | 1.9 | 3.8 | kΩ | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 43 | 65 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 80 | 120 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 480 | 720 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 220 | 330 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 22 | 33 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 46 | 70 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 645 | 968 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 215 | 323 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 2.6 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | 4 | A |  | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 1.2 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 8 | 91 | ns | IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 2 | 4 | nC | IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Forward Transconductance | gfs |  | 4 |  | S | VDS = 4 V, ID = 1.5 A | 2 |
| Total Gate Charge | Qg |  | 5 |  | nC | VDS = 10 V, VGS = 8 V, ID = 1.5 A | 2 |
| Total Gate Charge | Qg |  | 3 |  | nC | VDS = 10 V, VGS = 4.5 V, ID = 1.5 A | 2 |
| Gate-Source Charge | Qgs |  | 1 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 2 |  | nC |  | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | 20 |  | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ |  | -2.3 |  | mV/°C | ID = 250 µA | 2 |
| Reverse Recovery Fall Time | ta |  | 5 |  | ns | IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Reverse Recovery Rise Time | tb |  | 4 |  | ns | IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (KiCad official)

- Symbol: `SI1972DH-T1-GE3-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files: `si1972dh-t1-ge3-vb-etched.step` / `si1972dh-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si1972dh-t1-ge3-vb.step` / `si1972dh-t1-ge3-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/si1972dh-t1-ge3-vb-datasheet.pdf) (8 pp, sha256 `bbeb6680933c5961`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si1972dh-t1-ge3-vb-datasheet.pdf)