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SI1967DH-T1-GE3

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Vishay Intertech MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI1967DH-T1-GE3

Vishay Intertech · MOSFETs · SOT-363

SI1967DH-T1-GE3 from Vishay Intertech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the channel 1 P-Channel MOSFET; absolute maximum drain-source voltage across the device is -20 V.
2 G1 input Gate of the channel 1 P-Channel MOSFET; absolute maximum gate-source voltage is ±8 V.
3 D2 passive Drain of the channel 2 P-Channel MOSFET; absolute maximum drain-source voltage is -20 V.
4 S2 passive Source of the channel 2 P-Channel MOSFET; absolute maximum drain-source voltage is -20 V.
5 G2 input Gate of the channel 2 P-Channel MOSFET; absolute maximum gate-source voltage is ±8 V.
6 D1 passive Drain of the channel 1 P-Channel MOSFET; absolute maximum drain-source voltage is -20 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -1.3 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -1.1 A TC = 70 °C (TJ = 150 °C) 1
Continuous Drain Current ID -1 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID -0.83 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM -3 A 1
Continuous Source-Drain Diode Current IS -1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -0.6 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.25 W TC = 25 °C 1
Maximum Power Dissipation PD 0.8 W TC = 70 °C 1
Maximum Power Dissipation PD 0.74 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.47 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 130 170 °C/W t ≤ 5 s (notes b, d) 1
Maximum Junction-to-Foot (Drain) RthJF 80 100 °C/W Steady state 1
Maximum Junction-to-Ambient RthJA 220 °C/W Maximum under steady state conditions (note d) 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 85 °C 2
On-State Drain Current ID(on) -3 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.39 0.49 Ω VGS = -4.5 V, ID = -0.91 A 2
Drain-Source On-State Resistance RDS(on) 0.5 0.64 Ω VGS = -2.5 V, ID = -0.8 A 2
Drain-Source On-State Resistance RDS(on) 0.64 0.79 Ω VGS = -1.8 V, ID = -0.25 A 2
Total Gate Charge Qg 2.6 4 nC VDS = -10 V, VGS = -8 V, ID = -1.1 A 2
Total Gate Charge Qg 1.6 2.4 nC VDS = -10 V, VGS = -4.5 V, ID = -1.1 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -0.9 A 2
Pulse Diode Forward Current ISM -3 A 2
Continuous Source-Drain Diode Current IS -1 A TC = 25 °C 2
Body Diode Reverse Recovery Time trr 25 50 ns IF = -0.83 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 15 30 nC IF = -0.83 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Turn-On Delay Time td(on) 12 20 ns VDD = -10 V, RL = 12 Ω, ID ≅ -0.83 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 27 40 ns VDD = -10 V, RL = 12 Ω, ID ≅ -0.83 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 15 25 ns VDD = -10 V, RL = 12 Ω, ID ≅ -0.83 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = -10 V, RL = 12 Ω, ID ≅ -0.83 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 12 20 ns VDD = -10 V, RL = 12 Ω, ID ≅ -0.83 A, VGEN = -8 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 12 20 ns VDD = -10 V, RL = 12 Ω, ID ≅ -0.83 A, VGEN = -8 V, Rg = 1 Ω 2
VDS Temperature Coefficient ΔVDS/TJ -20 mV/°C ID = -250 µA 2
Forward Transconductance gfs 2 S VDS = -10 V, ID = -0.91 A 2
Input Capacitance Ciss 110 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 26 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 16 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 0.36 nC 2
Gate-Drain Charge Qgd 0.33 nC 2
Gate Resistance Rg 7.5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 25 ns VDD = -10 V, RL = 12 Ω, ID ≅ -0.83 A, VGEN = -8 V, Rg = 1 Ω 2
Reverse Recovery Fall Time ta 12 ns 2
Reverse Recovery Rise Time tb 13 ns 2

CAD (KiCad official)

  • Symbol: SI1967DH-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: si1967dh-t1-ge3-etched.step / si1967dh-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1967dh-t1-ge3.step / si1967dh-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 5ed6711181d71b33, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF