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SI1563DH-T1-GE3-VB

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VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI1563DH-T1-GE3-VB

VBsemi Elec · MOSFETs · SC-70-6

SI1563DH-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1), rated 20 V VDS with 0.090 Ω RDS(on) at VGS = 4.5 V.
2 G1 input Gate of the N-channel MOSFET (Q1), with a maximum gate-source voltage of ±20 V.
3 D2 passive Drain of the P-channel MOSFET (Q2), rated -20 V VDS with 0.155 Ω RDS(on) at VGS = -4.5 V.
4 S2 passive Source of the P-channel MOSFET (Q2), rated -20 V VDS.
5 G2 input Gate of the P-channel MOSFET (Q2), with a maximum gate-source voltage of ±20 V.
6 D1 passive Drain of the N-channel MOSFET (Q1), with a continuous drain current of 3.28 A (5 s, TA = 25 °C).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC-70-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 20 V TA = 25 °C, unless otherwise noted 1
Drain-Source Voltage (P-Channel) VDS -20 V TA = 25 °C, unless otherwise noted 1
Gate-Source Voltage (N- and P-Channel) VGS -20 20 V TA = 25 °C, unless otherwise noted 1
Continuous Drain Current, N-Channel, 5 s ID 3.28 A TA = 25 °C, t ≤ 5 s 1
Continuous Drain Current, N-Channel, Steady State ID 3.03 A TA = 25 °C, steady state 1
Continuous Drain Current, P-Channel, 5 s ID -2.8 A TA = 25 °C, t ≤ 5 s 1
Continuous Drain Current, P-Channel, Steady State ID -2.58 A TA = 25 °C, steady state 1
Continuous Drain Current, N-Channel, 5 s ID 2.12 A TA = 85 °C, t ≤ 5 s 1
Continuous Drain Current, N-Channel, Steady State ID 1.81 A TA = 85 °C, steady state 1
Continuous Drain Current, P-Channel, 5 s ID -1.72 A TA = 85 °C, t ≤ 5 s 1
Continuous Drain Current, P-Channel, Steady State ID -1.53 A TA = 85 °C, steady state 1
Pulsed Drain Current, N-Channel IDM 9.5 A 1
Pulsed Drain Current, P-Channel IDM -8.5 A 1
Continuous Source Current (Diode Conduction), N-Channel, 5 s IS 2.61 A t ≤ 5 s 1
Continuous Source Current (Diode Conduction), N-Channel, Steady State IS 2.48 A steady state 1
Continuous Source Current (Diode Conduction), P-Channel, 5 s IS -1.61 A t ≤ 5 s 1
Continuous Source Current (Diode Conduction), P-Channel, Steady State IS -1.48 A steady state 1
Maximum Power Dissipation, N-Channel, 5 s PD 1.24 W TA = 25 °C, t ≤ 5 s 1
Maximum Power Dissipation, N-Channel, Steady State PD 1.17 W TA = 25 °C, steady state 1
Maximum Power Dissipation, P-Channel, 5 s PD 1.1 W TA = 25 °C, t ≤ 5 s 1
Maximum Power Dissipation, P-Channel, Steady State PD 0.97 W TA = 25 °C, steady state 1
Maximum Power Dissipation, N-Channel, 5 s PD 0.88 W TA = 85 °C, t ≤ 5 s 1
Maximum Power Dissipation, N-Channel, Steady State PD 0.75 W TA = 85 °C, steady state 1
Maximum Power Dissipation, P-Channel, 5 s PD 0.66 W TA = 85 °C, t ≤ 5 s 1
Maximum Power Dissipation, P-Channel, Steady State PD 0.5 W TA = 85 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 130 170 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient RthJA 170 220 °C/W steady state 1
Maximum Junction-to-Foot (Drain) RthJF 80 100 °C/W steady state 1
Gate Threshold Voltage (N-Channel) VGS(th) 0.45 1 V VDS = VGS, ID = 100 µA 2
Gate Threshold Voltage (P-Channel) VGS(th) -1 -0.45 V VDS = VGS, ID = -100 µA 2
Gate-Body Leakage (N- and P-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 16 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = -16 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 5 µA VDS = 16 V, VGS = 0 V, TJ = 85 °C 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -5 µA VDS = -16 V, VGS = 0 V, TJ = 85 °C 2
On-State Drain Current (N-Channel) ID(on) 2 A VDS ≥ 5 V, VGS = 4.5 V 2
On-State Drain Current (P-Channel) ID(on) -2 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.09 Ω VGS = 4.5 V, ID = 2.55 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.155 Ω VGS = -4.5 V, ID = -1.85 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.11 Ω VGS = 2.5 V, ID = 1.55 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.19 Ω VGS = -2.5 V, ID = -1.35 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.13 Ω VGS = 1.8 V, ID = 0.50 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.22 Ω VGS = -1.8 V, ID = -0.50 A 2
Forward Transconductance (N-Channel) gfs 2.6 S VDS = 10 V, ID = 1.13 A 2
Forward Transconductance (P-Channel) gfs 1.5 S VDS = -10 V, ID = -0.88 A 2
Diode Forward Voltage (N-Channel) VSD 0.8 1.2 V IS = 0.48 A, VGS = 0 V 2
Diode Forward Voltage (P-Channel) VSD -0.8 -1.2 V IS = -0.48 A, VGS = 0 V 2
Total Gate Charge (N-Channel) Qg 1.25 2 nC VDS = 10 V, VGS = 4.5 V, ID = 2.55 A 2
Total Gate Charge (P-Channel) Qg 1.2 1.8 nC VDS = -10 V, VGS = -4.5 V, ID = -0.88 A 2
Turn-On Delay Time (N-Channel) td(on) 15 25 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω 2
Turn-On Delay Time (P-Channel) td(on) 18 30 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Rise Time (N-Channel) tr 22 35 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω 2
Rise Time (P-Channel) tr 25 40 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Turn-Off Delay Time (N-Channel) td(off) 25 40 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω 2
Turn-Off Delay Time (P-Channel) td(off) 15 25 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Fall Time (N-Channel) tf 12 20 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω 2
Fall Time (P-Channel) tf 12 20 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Reverse Recovery Time (N-Channel) trr 30 60 ns IF = 0.48 A, dI/dt = 100 A/µs 2
Reverse Recovery Time (P-Channel) trr 30 60 ns IF = 0.48 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: SI1563DH-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: si1563dh-t1-ge3-vb-etched.step / si1563dh-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1563dh-t1-ge3-vb.step / si1563dh-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 2ce794b412a7c348, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF