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SI1555DL-T1-GE3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI1555DL-T1-GE3-VB

VBsemi Elec · MOSFETs · SC-70-6

SI1555DL-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1, 20 V VDS, up to 3.28 A continuous at 5 s).
2 G1 input Gate of the N-channel MOSFET (Q1), VGS rated ±20 V with 1.8 V drive rating.
3 D2 passive Drain of the P-channel MOSFET (Q2, -20 V VDS, up to -2.80 A continuous at 5 s).
4 S2 passive Source of the P-channel MOSFET (Q2).
5 G2 input Gate of the P-channel MOSFET (Q2), VGS rated ±20 V with -1.8 V drive rating.
6 D1 passive Drain of the N-channel MOSFET (Q1), 20 V VDS.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC-70-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage N-Ch VDS 20 V TA = 25 °C 1
Drain-Source Voltage P-Ch VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current N-Ch 5 s ID 3.28 A TJ = 150 °C, TA = 25 °C, 5 s 1
Continuous Drain Current N-Ch Steady State ID 3.03 A TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current P-Ch 5 s ID -2.8 A TJ = 150 °C, TA = 25 °C, 5 s 1
Continuous Drain Current P-Ch Steady State ID -2.58 A TJ = 150 °C, TA = 25 °C 1
Pulsed Drain Current N-Ch IDM 9.5 A 1
Pulsed Drain Current P-Ch IDM -8.5 A 1
Continuous Source Current N-Ch 5 s IS 2.61 A Diode conduction, 5 s 1
Continuous Source Current N-Ch Steady State IS 2.48 A Diode conduction 1
Continuous Source Current P-Ch 5 s IS -1.61 A Diode conduction, 5 s 1
Continuous Source Current P-Ch Steady State IS -1.48 A Diode conduction 1
Maximum Power Dissipation N-Ch 5 s PD 1.24 W TA = 25 °C, 5 s 1
Maximum Power Dissipation N-Ch Steady State PD 1.17 W TA = 25 °C 1
Maximum Power Dissipation P-Ch 5 s PD 1.1 W TA = 25 °C, 5 s 1
Maximum Power Dissipation P-Ch Steady State PD 0.97 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance t ≤ 5 s RthJA 130 170 °C/W t ≤ 5 s, surface mounted on 1" x 1" FR4 1
Junction-to-Ambient Thermal Resistance Steady State RthJA 170 220 °C/W Steady State 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 80 100 °C/W Steady State 1
Gate Threshold Voltage N-Ch VGS(th) 0.45 1 V VDS = VGS, ID = 100 µA 2
Gate Threshold Voltage P-Ch VGS(th) -0.45 -1 V VDS = VGS, ID = -100 µA 2
Gate-Body Leakage N-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Gate-Body Leakage P-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current N-Ch IDSS 1 µA VDS = 16 V, VGS = 0 V 2
Zero Gate Voltage Drain Current P-Ch IDSS -1 µA VDS = -16 V, VGS = 0 V 2
Zero Gate Voltage Drain Current N-Ch hot IDSS 5 µA VDS = 16 V, VGS = 0 V, TJ = 85 °C 2
Zero Gate Voltage Drain Current P-Ch hot IDSS -5 µA VDS = -16 V, VGS = 0 V, TJ = 85 °C 2
On-State Drain Current N-Ch ID(on) 2 A VDS ≥ 5 V, VGS = 4.5 V 2
On-State Drain Current P-Ch ID(on) -2 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.09 Ω VGS = 4.5 V, ID = 2.55 A 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.155 Ω VGS = -4.5 V, ID = -1.85 A 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.11 Ω VGS = 2.5 V, ID = 1.55 A 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.13 Ω VGS = 1.8 V, ID = 0.50 A 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.22 Ω VGS = -1.8 V, ID = -0.50 A 2
Diode Forward Voltage N-Ch VSD 0.8 1.2 V IS = 0.48 A, VGS = 0 V 2
Diode Forward Voltage P-Ch VSD -0.8 -1.2 V IS = -0.48 A, VGS = 0 V 2
Total Gate Charge N-Ch Qg 1.25 2 nC VDS = 10 V, VGS = 4.5 V, ID = 2.55 A 2
Total Gate Charge P-Ch Qg 1.2 1.8 nC VDS = -10 V, VGS = -4.5 V, ID = -0.88 A 2
Turn-On Delay Time N-Ch td(on) 15 25 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω 2
Turn-On Delay Time P-Ch td(on) 18 30 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Rise Time N-Ch tr 22 35 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω 2
Rise Time P-Ch tr 25 40 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Turn-Off Delay Time N-Ch td(off) 25 40 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω 2
Turn-Off Delay Time P-Ch td(off) 15 25 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Fall Time N-Ch tf 12 20 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω 2
Fall Time P-Ch tf 12 20 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω 2
Reverse Recovery Time N-Ch trr 30 60 ns IF = 0.48 A, dI/dt = 100 A/µs 2
Reverse Recovery Time P-Ch trr 30 60 ns IF = 0.48 A, dI/dt = 100 A/µs 2
Forward Transconductance P-Ch gfs 1.5 S VDS = -10 V, ID = -0.88 A 2

CAD (KiCad official)

  • Symbol: SI1555DL-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: si1555dl-t1-ge3-vb-etched.step / si1555dl-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1555dl-t1-ge3-vb.step / si1555dl-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 3ef75797f24b10c8, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF