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Si1553CDL-T1-GE3-VB
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VBsemi Elec MOSFETs, SC-70-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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si1553cdl-t1-ge3-vb: specified limits as data (metadata.characteristics, 59 rows from the datasheet)
2 files changed
+781
README.md+66@@ -30,6 +30,72 @@ Same part, different packaging or reel option. - `Si1553CDL-T1-GE3-VB` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-channel) | VDS | | | 20 | V | N-Channel | 1 |+| Drain-Source Voltage (P-channel) | VDS | -20 | | | V | P-Channel | 1 |+| Gate-Source Voltage (N-channel) | VGS | -20 | | 20 | V | N-Channel | 1 |+| Gate-Source Voltage (P-channel) | VGS | -20 | | 20 | V | P-Channel | 1 |+| Continuous Drain Current (N-channel) | ID | | | 3.28 | A | TA = 25 °C, t ≤ 5 s | 1 |+| Continuous Drain Current (N-channel) | ID | | | 3.03 | A | TA = 25 °C, steady state | 1 |+| Continuous Drain Current (P-channel) | ID | -2.8 | | | A | TA = 25 °C, t ≤ 5 s | 1 |+| Continuous Drain Current (P-channel) | ID | -2.58 | | | A | TA = 25 °C, steady state | 1 |+| Continuous Drain Current (N-channel) | ID | | | 2.12 | A | TA = 85 °C, t ≤ 5 s | 1 |+| Continuous Drain Current (N-channel) | ID | | | 1.81 | A | TA = 85 °C, steady state | 1 |+| Continuous Drain Current (P-channel) | ID | -1.72 | | | A | TA = 85 °C, t ≤ 5 s | 1 |+| Continuous Drain Current (P-channel) | ID | -1.53 | | | A | TA = 85 °C, steady state | 1 |+| Pulsed Drain Current (N-channel) | IDM | | | 9.5 | A | | 1 |+| Pulsed Drain Current (P-channel) | IDM | -8.5 | | | A | | 1 |+| Continuous Source Current (Diode Conduction) (N-channel) | IS | | | 2.61 | A | TA = 25 °C, t ≤ 5 s | 1 |+| Continuous Source Current (Diode Conduction) (N-channel) | IS | | | 2.48 | A | TA = 25 °C, steady state | 1 |+| Continuous Source Current (Diode Conduction) (P-channel) | IS | -1.61 | | | A | TA = 25 °C, t ≤ 5 s | 1 |+| Continuous Source Current (Diode Conduction) (P-channel) | IS | -1.48 | | | A | TA = 25 °C, steady state | 1 |+| Maximum Power Dissipation (N-channel) | PD | | | 1.24 | W | TA = 25 °C, t ≤ 5 s | 1 |+| Maximum Power Dissipation (N-channel) | PD | | | 1.17 | W | TA = 25 °C, steady state | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 1.1 | W | TA = 25 °C, t ≤ 5 s | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 0.97 | W | TA = 25 °C, steady state | 1 |+| Maximum Power Dissipation (N-channel) | PD | | | 0.88 | W | TA = 85 °C, t ≤ 5 s | 1 |+| Maximum Power Dissipation (N-channel) | PD | | | 0.75 | W | TA = 85 °C, steady state | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 0.66 | W | TA = 85 °C, t ≤ 5 s | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 0.5 | W | TA = 85 °C, steady state | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 130 | 170 | °C/W | t ≤ 5 s | 1 |+| Maximum Junction-to-Ambient | RthJA | | 170 | 220 | °C/W | Steady State | 1 |+| Maximum Junction-to-Foot (Drain) | RthJF | | 80 | 100 | °C/W | Steady State | 1 |+| Gate Threshold Voltage (N-channel) | VGS(th) | 0.45 | | 1 | V | VDS = VGS, ID = 100 µA | 2 |+| Gate-Body Leakage (N-channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 |+| Gate-Body Leakage (P-channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 |+| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | µA | VDS = 16 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | | | µA | VDS = -16 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 85 °C | 2 |+| Zero Gate Voltage Drain Current (P-channel) | IDSS | -5 | | | µA | VDS = -16 V, VGS = 0 V, TJ = 85 °C | 2 |+| On-State Drain Current (N-channel) | ID(on) | 2 | | | A | VDS ≥ 5 V, VGS = 4.5 V | 2 |+| On-State Drain Current (P-channel) | ID(on) | | | -2 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 |+| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.09 | Ω | VGS = 4.5 V, ID = 2.55 A | 2 |+| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.155 | Ω | VGS = -4.5 V, ID = -1.85 A | 2 |+| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.11 | Ω | VGS = 2.5 V, ID = 1.55 A | 2 |+| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.19 | Ω | VGS = -2.5 V, ID = -1.35 A | 2 |+| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.13 | Ω | VGS = 1.8 V, ID = 0.50 A | 2 |+| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.22 | Ω | VGS = -1.8 V, ID = -0.50 A | 2 |+| Diode Forward Voltage (N-channel) | VSD | | 0.8 | 1.2 | V | IS = 0.48 A, VGS = 0 V | 2 |+| Diode Forward Voltage (P-channel) | VSD | -1.2 | -0.8 | | V | IS = -0.48 A, VGS = 0 V | 2 |+| Total Gate Charge (N-channel) | Qg | | 1.25 | 2 | nC | VDS = 10 V, VGS = 4.5 V, ID = 2.55 A | 2 |+| Total Gate Charge (P-channel) | Qg | | 1.2 | 1.8 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.88 A | 2 |+| Turn-On Delay Time (N-channel) | td(on) | | 15 | 25 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 |+| Turn-On Delay Time (P-channel) | td(on) | | 18 | 30 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 |+| Rise Time (N-channel) | tr | | 22 | 35 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 |+| Rise Time (P-channel) | tr | | 25 | 40 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 |+| Turn-Off Delay Time (N-channel) | td(off) | | 25 | 40 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 |+| Turn-Off Delay Time (P-channel) | td(off) | | 15 | 25 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 |+| Fall Time (N-channel) | tf | | 12 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 |+| Fall Time (P-channel) | tf | | 12 | 20 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 |+| Reverse Recovery Time (N-channel) | trr | | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 |+| Reverse Recovery Time (P-channel) | trr | | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 |+ ## CAD (KiCad official) - Symbol: `Si1553CDL-T1-GE3-VB`
page.json+715@@ -134,6 +134,721 @@ "Package": "SC-70-6", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "7ddde98514b336eb",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "N-Channel",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "P-Channel",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N-channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "N-Channel",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (P-channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "P-Channel",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.28,+ "conditions": "TA = 25 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.03,+ "conditions": "TA = 25 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.8,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.58,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.12,+ "conditions": "TA = 85 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.81,+ "conditions": "TA = 85 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.72,+ "typ": null,+ "max": null,+ "conditions": "TA = 85 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.53,+ "typ": null,+ "max": null,+ "conditions": "TA = 85 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -8.5,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Diode Conduction) (N-channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.61,+ "conditions": "TA = 25 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Diode Conduction) (N-channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.48,+ "conditions": "TA = 25 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Diode Conduction) (P-channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.61,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Diode Conduction) (P-channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.48,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.24,+ "conditions": "TA = 25 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.17,+ "conditions": "TA = 25 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.1,+ "conditions": "TA = 25 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.97,+ "conditions": "TA = 25 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.88,+ "conditions": "TA = 85 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.75,+ "conditions": "TA = 85 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.66,+ "conditions": "TA = 85 °C, t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "TA = 85 °C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 130,+ "max": 170,+ "conditions": "t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 170,+ "max": 220,+ "conditions": "Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 80,+ "max": 100,+ "conditions": "Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.45,+ "typ": null,+ "max": 1,+ "conditions": "VDS = VGS, ID = 100 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage (N-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 8 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage (P-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 8 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 16 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "VDS = -16 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS = 16 V, VGS = 0 V, TJ = 85 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "VDS = -16 V, VGS = 0 V, TJ = 85 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (N-channel)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 2,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 5 V, VGS = 4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (P-channel)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2,+ "conditions": "VDS ≤ -5 V, VGS = -4.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.09,+ "conditions": "VGS = 4.5 V, ID = 2.55 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.155,+ "conditions": "VGS = -4.5 V, ID = -1.85 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.11,+ "conditions": "VGS = 2.5 V, ID = 1.55 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.19,+ "conditions": "VGS = -2.5 V, ID = -1.35 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.13,+ "conditions": "VGS = 1.8 V, ID = 0.50 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.22,+ "conditions": "VGS = -1.8 V, ID = -0.50 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (N-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IS = 0.48 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (P-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": -1.2,+ "typ": -0.8,+ "max": null,+ "conditions": "IS = -0.48 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (N-channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.25,+ "max": 2,+ "conditions": "VDS = 10 V, VGS = 4.5 V, ID = 2.55 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (P-channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.2,+ "max": 1.8,+ "conditions": "VDS = -10 V, VGS = -4.5 V, ID = -0.88 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (N-channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": 25,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (P-channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 18,+ "max": 30,+ "conditions": "VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time (N-channel)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": 35,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time (P-channel)",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 25,+ "max": 40,+ "conditions": "VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time (N-channel)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 25,+ "max": 40,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time (P-channel)",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": 25,+ "conditions": "VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time (N-channel)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 20,+ "conditions": "VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time (P-channel)",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 20,+ "conditions": "VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω",+ "source_page": 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