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Si1553CDL-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SC-70-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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Contents
README
markdownSi1553CDL-T1-GE3-VB
VBsemi Elec · MOSFETs · SC-70-6
Si1553CDL-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1). Typically tied to the low-side reference in a load-switch configuration. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1). VGS(th) typ ~0.45 V min at ID=100 µA; absolute maximum VGS is ±20 V. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (Q2). Absolute maximum VDS is -20 V; continuous ID up to -2.80 A at TA=25 °C. |
| 4 | S2 | passive | Source of the P-channel MOSFET (Q2). Typically tied to the high-side supply rail in a load-switch configuration. |
| 5 | G2 | input | Gate of the P-channel MOSFET (Q2). VGS(th) typ ~-0.45 V min at ID=-100 µA; absolute maximum VGS is ±20 V. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1). Absolute maximum VDS is 20 V; continuous ID up to 3.28 A at TA=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Ordering variants
Same part, different packaging or reel option.
Si1553CDL-T1-GE3-VB
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 20 | V | N-Channel | 1 | ||
| Drain-Source Voltage (P-channel) | VDS | -20 | V | P-Channel | 1 | ||
| Gate-Source Voltage (N-channel) | VGS | -20 | 20 | V | N-Channel | 1 | |
| Gate-Source Voltage (P-channel) | VGS | -20 | 20 | V | P-Channel | 1 | |
| Continuous Drain Current (N-channel) | ID | 3.28 | A | TA = 25 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current (N-channel) | ID | 3.03 | A | TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current (P-channel) | ID | -2.8 | A | TA = 25 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current (P-channel) | ID | -2.58 | A | TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current (N-channel) | ID | 2.12 | A | TA = 85 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current (N-channel) | ID | 1.81 | A | TA = 85 °C, steady state | 1 | ||
| Continuous Drain Current (P-channel) | ID | -1.72 | A | TA = 85 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current (P-channel) | ID | -1.53 | A | TA = 85 °C, steady state | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 9.5 | A | 1 | |||
| Pulsed Drain Current (P-channel) | IDM | -8.5 | A | 1 | |||
| Continuous Source Current (Diode Conduction) (N-channel) | IS | 2.61 | A | TA = 25 °C, t ≤ 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) (N-channel) | IS | 2.48 | A | TA = 25 °C, steady state | 1 | ||
| Continuous Source Current (Diode Conduction) (P-channel) | IS | -1.61 | A | TA = 25 °C, t ≤ 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) (P-channel) | IS | -1.48 | A | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 1.24 | W | TA = 25 °C, t ≤ 5 s | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 1.17 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 1.1 | W | TA = 25 °C, t ≤ 5 s | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 0.97 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 0.88 | W | TA = 85 °C, t ≤ 5 s | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 0.75 | W | TA = 85 °C, steady state | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 0.66 | W | TA = 85 °C, t ≤ 5 s | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 0.5 | W | TA = 85 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 130 | 170 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 170 | 220 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 80 | 100 | °C/W | Steady State | 1 | |
| Gate Threshold Voltage (N-channel) | VGS(th) | 0.45 | 1 | V | VDS = VGS, ID = 100 µA | 2 | |
| Gate-Body Leakage (N-channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Gate-Body Leakage (P-channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | µA | VDS = 16 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | µA | VDS = -16 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 85 °C | 2 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -5 | µA | VDS = -16 V, VGS = 0 V, TJ = 85 °C | 2 | ||
| On-State Drain Current (N-channel) | ID(on) | 2 | A | VDS ≥ 5 V, VGS = 4.5 V | 2 | ||
| On-State Drain Current (P-channel) | ID(on) | -2 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| Drain-Source On-State Resistance (N-channel) | RDS(on) | 0.09 | Ω | VGS = 4.5 V, ID = 2.55 A | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.155 | Ω | VGS = -4.5 V, ID = -1.85 A | 2 | ||
| Drain-Source On-State Resistance (N-channel) | RDS(on) | 0.11 | Ω | VGS = 2.5 V, ID = 1.55 A | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.19 | Ω | VGS = -2.5 V, ID = -1.35 A | 2 | ||
| Drain-Source On-State Resistance (N-channel) | RDS(on) | 0.13 | Ω | VGS = 1.8 V, ID = 0.50 A | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.22 | Ω | VGS = -1.8 V, ID = -0.50 A | 2 | ||
| Diode Forward Voltage (N-channel) | VSD | 0.8 | 1.2 | V | IS = 0.48 A, VGS = 0 V | 2 | |
| Diode Forward Voltage (P-channel) | VSD | -1.2 | -0.8 | V | IS = -0.48 A, VGS = 0 V | 2 | |
| Total Gate Charge (N-channel) | Qg | 1.25 | 2 | nC | VDS = 10 V, VGS = 4.5 V, ID = 2.55 A | 2 | |
| Total Gate Charge (P-channel) | Qg | 1.2 | 1.8 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.88 A | 2 | |
| Turn-On Delay Time (N-channel) | td(on) | 15 | 25 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| Turn-On Delay Time (P-channel) | td(on) | 18 | 30 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Rise Time (N-channel) | tr | 22 | 35 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| Rise Time (P-channel) | tr | 25 | 40 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time (N-channel) | td(off) | 25 | 40 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time (P-channel) | td(off) | 15 | 25 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Fall Time (N-channel) | tf | 12 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| Fall Time (P-channel) | tf | 12 | 20 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Reverse Recovery Time (N-channel) | trr | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Time (P-channel) | trr | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
Si1553CDL-T1-GE3-VB - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files:
si1553cdl-t1-ge3-vb-etched.step/si1553cdl-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si1553cdl-t1-ge3-vb.step/si1553cdl-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
7ddde98514b336eb, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).