Si1553CDL-T1-GE3-VB - Commit

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Set visibility: public

Ray ·ac294e9fb9 ·1mo ago ·parent 545465d

1 file changed +8−5

page.json+8−5

@@ -38,13 +38,13 @@         "number": "2",         "name": "G1",         "type": "input",-        "description": "Gate of the N-channel MOSFET (Q1). VGS(th) typ ~0.45 V min at ID=100 \u00b5A; absolute maximum VGS is \u00b120 V."+        "description": "Gate of the N-channel MOSFET (Q1). VGS(th) typ ~0.45 V min at ID=100 µA; absolute maximum VGS is ±20 V."       },       {         "number": "3",         "name": "D2",         "type": "passive",-        "description": "Drain of the P-channel MOSFET (Q2). Absolute maximum VDS is -20 V; continuous ID up to -2.80 A at TA=25 \u00b0C."+        "description": "Drain of the P-channel MOSFET (Q2). Absolute maximum VDS is -20 V; continuous ID up to -2.80 A at TA=25 °C."       },       {         "number": "4",@@ -56,13 +56,13 @@         "number": "5",         "name": "G2",         "type": "input",-        "description": "Gate of the P-channel MOSFET (Q2). VGS(th) typ ~-0.45 V min at ID=-100 \u00b5A; absolute maximum VGS is \u00b120 V."+        "description": "Gate of the P-channel MOSFET (Q2). VGS(th) typ ~-0.45 V min at ID=-100 µA; absolute maximum VGS is ±20 V."       },       {         "number": "6",         "name": "D1",         "type": "passive",-        "description": "Drain of the N-channel MOSFET (Q1). Absolute maximum VDS is 20 V; continuous ID up to 3.28 A at TA=25 \u00b0C."+        "description": "Drain of the N-channel MOSFET (Q1). Absolute maximum VDS is 20 V; continuous ID up to 3.28 A at TA=25 °C."       }     ],     "provenance": {@@ -132,5 +132,8 @@     "docs/si1553cdl-t1-ge3-vb-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file