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SI1443EDH-T1-GE3

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Vishay Intertech MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI1443EDH-T1-GE3

Vishay Intertech · MOSFETs · SC-70-6

SI1443EDH-T1-GE3 from Vishay Intertech, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -4 A at TC = 25 °C (limited by package) and pulsed drain current IDM is -15 A (t = 300 µs).
2 D passive Drain terminal of the P-channel MOSFET; internally common with pins 1, 5 and 6, and rated with the same -4 A continuous and -15 A pulsed drain current limits.
3 G input Gate terminal of the P-channel MOSFET; gate-source voltage VGS is rated ±12 V (absolute maximum).
4 S passive Source terminal of the P-channel MOSFET; continuous source-drain diode current IS is -2.3 A at TC = 25 °C.
5 D passive Drain terminal of the P-channel MOSFET; internally common with pins 1, 2 and 6, and rated with the same -4 A continuous and -15 A pulsed drain current limits.
6 D passive Drain terminal of the P-channel MOSFET; internally common with pins 1, 2 and 5, and rated with the same -4 A continuous and -15 A pulsed drain current limits.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SC-70-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS -30 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -0.6 -1.5 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -20 20 μA VDS = 0 V, VGS = ±12 V 2
Gate-source leakage IGSS -1 1 μA VDS = 0 V, VGS = ±4.5 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -30 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -10 μA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) -15 A VDS -5 V, VGS = -10 V 2
Drain-source on-state resistance RDS(on) 0.043 0.054 Ω VGS = -10 V, ID = -4.3 A 2
Drain-source on-state resistance RDS(on) 0.049 0.062 Ω VGS = -4.5 V, ID = -4 A 2
Drain-source on-state resistance RDS(on) 0.067 0.085 Ω VGS = -2.5 V, ID = -3.5 A 2
Total gate charge Qg 18.5 28 nC VDS = -15 V, VGS = -10 V, ID = -4.3 A 2
Total gate charge Qg 8.6 13 nC VDS = -15 V, VGS = -4.5 V, ID = -4.3 A 2
Gate resistance Rg 90 450 900 Ω f = 1 MHz 2
Turn-on delay time td(on) 125 188 ns VDD = -15 V, RL = 4.4, ID -3.4 A, VGEN = 4.5 V, Rg = 1 2
Rise time tr 220 330 ns 2
Turn-off delay time td(off) 1115 1673 ns 2
Fall time tf 435 653 ns 2
Turn-on delay time td(on) 40 60 ns VDD = -15 V, RL = 4.4, ID -3.4 A, VGEN = -10 V, Rg = 1 2
Rise time tr 64 98 ns 2
Turn-off delay time td(off) 1800 2700 ns 2
Fall time tf 420 630 ns 2
Continuous source-drain diode current IS -2.3 A TC = 25 °C 2
Pulse diode forward current ISM -15 A 2
Body diode voltage VSD -0.85 -1.2 V IS = -3.4 A, VGS = 0 V 2
Body diode reverse recovery time trr 14 21 ns IF = -3.4 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 7 14 nC 2
Drain-source voltage VDS -30 V 1
Gate-source voltage VGS -12 12 V 1
Continuous drain current ID -4 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID -3.4 A TJ = 150 °C, TA = 70 °C 1
Pulsed drain current IDM -15 A t = 300 μs 1
Continuous source-drain diode current IS -2.3 A TC = 25 °C 1
Continuous source-drain diode current IS -1.3 A TA = 25 °C 1
Maximum power dissipation PD 2.8 W TC = 25 °C 1
Maximum power dissipation PD 1.8 W TC = 70 °C 1
Maximum power dissipation PD 1.6 W TA = 25 °C 1
Maximum power dissipation PD 1 W TA = 70 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 260 °C 1
Maximum junction-to-ambient (t ≤ 5 s) RthJA 60 80 °C/W t ≤ 5 s 1
Maximum junction-to-foot (drain), steady state RthJF 34 45 °C/W Steady state 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version 8

CAD (KiCad official)

  • Symbol: SI1443EDH-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: si1443edh-t1-ge3-etched.step / si1443edh-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1443edh-t1-ge3.step / si1443edh-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (12 pp, sha256 9e5bb5ceeccff935, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF