# SI1441EDH-T1-GE3-VB

**VBsemi Elec** · MOSFETs · SC-70-6

SI1441EDH-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, internally connected to the other drain pins; P-channel drain-source voltage rated -20 V. |
| 2 | D | passive | Drain, internally connected to the other drain pins; continuous drain current rated -4 A. |
| 3 | G | input | Gate, with a gate-source voltage limit of ±12 V. |
| 4 | S | passive | Source of the P-channel MOSFET; continuous source-drain diode current is -2.3 A at TC = 25 °C. |
| 5 | D | passive | Drain, internally connected to the other drain pins; pulsed drain current is -25 A (t = 300 µs). |
| 6 | D | passive | Drain, internally connected to the other drain pins; RDS(on) is 0.034 Ω at VGS = -4.5 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -4 | A | TC = 25 °C (TJ = 150 °C) | 1 |
| Pulsed Drain Current | IDM |  |  | -25 | A | t = 300 µs | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | -2.3 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | -1.3 | A | TA = 25 °C (note b) | 1 |
| Maximum Power Dissipation | PD |  |  | 2.8 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.8 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TA = 25 °C (note b) | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA = 70 °C (note b) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 260 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 60 | 80 | °C/W | t ≤ 5 s (notes b, c, d) | 1 |
| Maximum Junction-to-Ambient, steady state | RthJA |  |  | 125 | °C/W | Steady state (note d) | 1 |
| Maximum Junction-to-Foot (Drain), steady state | RthJF |  | 34 | 45 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | -20 |  |  | V | VGS = 0 V, ID = -250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.4 |  | -1 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Source Leakage | IGSS | -8 |  | 8 | µA | VDS = 0 V, VGS = ±10 V | 2 |
| Gate-Source Leakage | IGSS | -1 |  | 1 | µA | VDS = 0 V, VGS = ±4.5 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS = -20 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -15 |  |  | A | VDS = -5 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.034 | Ω | VGS = -4.5 V, ID = -5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.045 | Ω | VGS = -2.5 V, ID = -4.4 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.067 | Ω | VGS = -1.8 V, ID = -1 A | 2 |
| Total Gate Charge | Qg |  | 22 | 33 | nC | VDS = -10 V, VGS = -8 V, ID = -5 A | 2 |
| Total Gate Charge | Qg |  | 12.5 | 19 | nC | VDS = -10 V, VGS = -4.5 V, ID = -5 A | 2 |
| Gate Resistance | Rg | 0.08 | 0.43 | 0.86 | kΩ | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 150 | 225 | ns | VDD = -10 V, RL = 1.4 Ω, ID -4 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 300 | 450 | ns | VDD = -10 V, RL = 1.4 Ω, ID -4 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 1620 | 2430 | ns | VDD = -10 V, RL = 1.4 Ω, ID -4 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 560 | 840 | ns | VDD = -10 V, RL = 1.4 Ω, ID -4 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 50 | 100 | ns | VDD = -10 V, RL = 1.4 Ω, ID -4 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 90 | 180 | ns | VDD = -10 V, RL = 1.4 Ω, ID -4 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 2500 | 3750 | ns | VDD = -10 V, RL = 1.4 Ω, ID -4 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 600 | 900 | ns | VDD = -10 V, RL = 1.4 Ω, ID -4 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | -2.3 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | -25 | A |  | 2 |
| Body Diode Voltage | VSD |  | -0.85 | -1.2 | V | IS = -4 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 18 | 36 | ns | IF = -4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (KiCad official)

- Symbol: `SI1441EDH-T1-GE3-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files: `si1441edh-t1-ge3-vb-etched.step` / `si1441edh-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si1441edh-t1-ge3-vb.step` / `si1441edh-t1-ge3-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603077321368879104) (9 pp, sha256 `3d8f9da469b704ee`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si1441edh-t1-ge3-vb-datasheet.pdf)