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SI1426DH-T1-GE3-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SC-70-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs si1426dh-t1-ge3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
viewers si1426dh-t1-ge3-vb: viewers · Ray 27d ago
package.json Publish 0.1.0 · Ray 27d ago
page.json Brief states the pinout check that actually ran (was an unconditional "Datasheet-verified pinout") · Ray 11d ago
README.md si1426dh-t1-ge3-vb: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray 15d ago
si1426dh-t1-ge3-vb-etched.fit.json si1426dh-t1-ge3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
si1426dh-t1-ge3-vb-etched.glb si1426dh-t1-ge3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
si1426dh-t1-ge3-vb-etched.step si1426dh-t1-ge3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 3d ago
si1426dh-t1-ge3-vb.glb Publish 0.1.0 · Ray 27d ago
si1426dh-t1-ge3-vb.kicad_mod Publish 0.1.0 · Ray 27d ago
si1426dh-t1-ge3-vb.kicad_sym Publish 0.1.0 · Ray 27d ago
si1426dh-t1-ge3-vb.lbr Publish 0.1.0 · Ray 27d ago
si1426dh-t1-ge3-vb.step Publish 0.1.0 · Ray 27d ago

SI1426DH-T1-GE3-VB

VBsemi Elec · MOSFETs · SC-70-6

SI1426DH-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain. Internally connected to the MOSFET drain; ganged with pins 2, 5, and 6 to share current and improve thermal dissipation. VDS(max) = 30 V.
2 D passive Drain. Internally connected to the MOSFET drain; ganged with pins 1, 5, and 6. VDS(max) = 30 V.
3 G input Gate. Controls MOSFET conduction; VGS(th) = 0.5 V to 2.5 V, absolute-max VGS = ±20 V. Drive to 4.5 V or 10 V for full enhancement (RDS(on) = 0.027 Ω / 0.023 Ω typ.).
4 S passive Source. MOSFET source terminal; body-diode anode (VSD ≈ 0.82 V typ., 1.2 V max at IS = 4.4 A).
5 D passive Drain. Internally connected to the MOSFET drain; ganged with pins 1, 2, and 6. VDS(max) = 30 V.
6 D passive Drain. Internally connected to the MOSFET drain; ganged with pins 1, 2, and 5. VDS(max) = 30 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC-70-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • SI1426DH-T1-GE3-VB

CAD (KiCad official)

  • Symbol: SI1426DH-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: si1426dh-t1-ge3-vb-etched.step / si1426dh-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1426dh-t1-ge3-vb.step / si1426dh-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 7f540a15d01f940a, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF