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SI1426DH-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SC-70-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+110−8@@ -1,13 +1,120 @@ {+ "schema_version": 1,+ "type": "component", "slug": "si1426dh-t1-ge3-vb",+ "title": "SI1426DH-T1-GE3-VB",+ "brief": "VBsemi Elec MOSFETs, SC-70-6. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "VBsemi Elec MOSFETs, SC-70-6. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "si1426dh-t1-ge3-vb" ],+ "component": {+ "mpn": "SI1426DH-T1-GE3-VB",+ "manufacturer": "VBsemi Elec",+ "package": "SC-70-6",+ "pin_count": 6,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609137733089062912",+ "parts": {+ "symbol": "si1426dh-t1-ge3-vb.kicad_sym",+ "footprint": "si1426dh-t1-ge3-vb.kicad_mod",+ "model_3d": "si1426dh-t1-ge3-vb.glb",+ "model_3d_step": "si1426dh-t1-ge3-vb.step",+ "lbr": "si1426dh-t1-ge3-vb.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "D",+ "type": "passive",+ "description": "Drain. Internally connected to the MOSFET drain; ganged with pins 2, 5, and 6 to share current and improve thermal dissipation. VDS(max) = 30 V."+ },+ {+ "number": "2",+ "name": "D",+ "type": "passive",+ "description": "Drain. Internally connected to the MOSFET drain; ganged with pins 1, 5, and 6. VDS(max) = 30 V."+ },+ {+ "number": "3",+ "name": "G",+ "type": "input",+ "description": "Gate. Controls MOSFET conduction; VGS(th) = 0.5 V to 2.5 V, absolute-max VGS = \u00b120 V. Drive to 4.5 V or 10 V for full enhancement (RDS(on) = 0.027 \u03a9 / 0.023 \u03a9 typ.)."+ },+ {+ "number": "4",+ "name": "S",+ "type": "passive",+ "description": "Source. MOSFET source terminal; body-diode anode (VSD \u2248 0.82 V typ., 1.2 V max at IS = 4.4 A)."+ },+ {+ "number": "5",+ "name": "D",+ "type": "passive",+ "description": "Drain. Internally connected to the MOSFET drain; ganged with pins 1, 2, and 6. VDS(max) = 30 V."+ },+ {+ "number": "6",+ "name": "D",+ "type": "passive",+ "description": "Drain. Internally connected to the MOSFET drain; ganged with pins 1, 2, and 5. VDS(max) = 30 V."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609137733089062912",+ "pages": null,+ "sha256": "7f540a15d01f940a",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 6,+ "described": 6,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "VBsemi Elec",+ "Package": "SC-70-6",+ "Category": "Transistors/Thyristors",+ "Pins": "6"+ }+ },+ "variants": [+ {+ "mpn": "SI1426DH-T1-GE3-VB",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "si1426dh-t1-ge3-vb"+ ],+ "discovery_pitch": "SI1426DH-T1-GE3-VB (VBsemi Elec) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +132,5 @@ "docs/si1426dh-t1-ge3-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }