# SI1424EDH-T1-GE3-VB

**VBsemi Elec** · MOSFETs · SC-70-6

SI1424EDH-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, tied to the other drain pins, rated for VDS of 30 V and continuous drain current up to 4.5 A at TC = 25 °C. |
| 2 | D | passive | Drain, tied to the other drain pins, rated for VDS of 30 V and pulsed drain current of 25 A (t = 300 µs). |
| 3 | G | input | Gate, limited to ±20 V gate-source voltage, with RDS(on) specified at VGS = 10 V and 4.5 V. |
| 4 | S | passive | Source, with continuous source-drain body diode current up to 2.1 A at TC = 25 °C. |
| 5 | D | passive | Drain, tied to the other drain pins, with a maximum junction-to-foot (drain) thermal resistance of 50 °C/W. |
| 6 | D | passive | Drain, tied to the other drain pins, with RDS(on) of 0.023 Ω at VGS = 10 V and ID = 3.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 4.5 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 4 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 4.1 | A | TA = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.6 | A | TA = 70 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 25 | A | t = 300 µs | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 2.1 | A | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.3 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 75 | 100 | °C/W | t ≤ 5 s, surface mounted | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 40 | 50 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | VDS | 30 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 |  | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 70 °C | 2 |
| Gate Resistance | Rg | 2.5 | 12.6 | 25.2 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 8.2 | 13 | nC | VDS = 15 V, VGS = 10 V, ID = 3.5 A | 2 |
| Total Gate Charge | Qg |  | 4.2 | 7 | nC | VDS = 15 V, VGS = 4.5 V, ID = 3.5 A | 2 |
| Turn-On Delay Time | td(on) |  | 6 | 12 | ns | VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 20 | 30 | ns | VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 14 | 21 | ns | VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 10 | 20 | ns | VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 11 | 20 | ns | VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 20 | 30 | ns | VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 7 | 14 | ns | VDD = 15 V, RL = 3.4 Ω, ID 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD |  | 0.82 | 1.2 | V | IS = 4.4 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 13 | 20 | ns | IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 6 | 12 | nC | IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (KiCad official)

- Symbol: `SI1424EDH-T1-GE3-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files: `si1424edh-t1-ge3-vb-etched.step` / `si1424edh-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si1424edh-t1-ge3-vb.step` / `si1424edh-t1-ge3-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/si1424edh-t1-ge3-vb-datasheet.pdf) (8 pp, sha256 `b841e2f9f6e6fa0b`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si1424edh-t1-ge3-vb-datasheet.pdf)