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SI1417EDH-T1-GE3-VB

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VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI1417EDH-T1-GE3-VB

VBsemi Elec · MOSFETs · SC-70-6

SI1417EDH-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, P-channel MOSFET with VDS rated -20 V, internally connected to the other drain pins (2, 5, 6).
2 D passive Drain, P-channel MOSFET with VDS rated -20 V, internally connected to the other drain pins (1, 5, 6).
3 G input Gate, with VGS rated ±12 V maximum and threshold voltage of -0.4 V to -1 V at ID = -250 µA.
4 S passive Source, with continuous source-drain body diode current of -2.3 A at TC = 25 °C.
5 D passive Drain, P-channel MOSFET with VDS rated -20 V, internally connected to the other drain pins (1, 2, 6).
6 D passive Drain, P-channel MOSFET with VDS rated -20 V, internally connected to the other drain pins (1, 2, 5).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC-70-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Continuous Drain Current ID -4 A TJ = 150 °C, TC = 25 °C 1
Pulsed Drain Current IDM -25 A t = 300 µs 1
Continuous Source-Drain Diode Current IS -2.3 A TC = 25 °C 1
Maximum Power Dissipation PD 2.8 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 60 80 °C/W t ≤ 5 s, surface mounted on 1" x 1" FR4 board 1
Maximum Junction-to-Foot (Drain) RthJF 34 45 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.4 -1 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 8 µA VDS = 0 V, VGS = ± 10 V 2
Gate-Source Leakage IGSS 1 µA VDS = 0 V, VGS = ± 4.5 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -15 A VDS ≤ - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.034 Ω VGS = - 4.5 V, ID = - 5 A 2
Drain-Source On-State Resistance RDS(on) 0.045 Ω VGS = - 2.5 V, ID = - 4.4 A 2
Drain-Source On-State Resistance RDS(on) 0.067 Ω VGS = - 1.8 V, ID = - 1 A 2
Forward Transconductance gfs 16 S VDS = - 10 V, ID = - 5 A 2
Total Gate Charge Qg 22 33 nC VDS = - 10 V, VGS = - 8 V, ID = - 5 A 2
Total Gate Charge Qg 12.5 19 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 2
Gate Resistance Rg 0.08 0.43 0.86 k f = 1 MHz 2
Turn-On Delay Time td(on) 150 225 ns VDD = - 10 V, RL = 1.4, VGEN = - 4.5 V, Rg = 1 2
Rise Time tr 300 450 ns VDD = - 10 V, RL = 1.4, VGEN = - 4.5 V, Rg = 1 2
Turn-Off Delay Time td(off) 1620 2430 ns VDD = - 10 V, RL = 1.4, VGEN = - 4.5 V, Rg = 1 2
Fall Time tf 560 840 ns VDD = - 10 V, RL = 1.4, VGEN = - 4.5 V, Rg = 1 2
Turn-On Delay Time td(on) 50 100 ns VDD = - 10 V, RL = 1.4, VGEN = - 10 V, Rg = 1 2
Rise Time tr 90 180 ns VDD = - 10 V, RL = 1.4, VGEN = - 10 V, Rg = 1 2
Turn-Off Delay Time td(off) 2500 3750 ns VDD = - 10 V, RL = 1.4, VGEN = - 10 V, Rg = 1 2
Fall Time tf 600 900 ns VDD = - 10 V, RL = 1.4, VGEN = - 10 V, Rg = 1 2
Continuous Source-Drain Diode Current IS -2.3 A TC = 25 °C 2
Pulse Diode Forward Current ISM -25 A 2
Body Diode Voltage VSD -0.85 -1.2 V IS = - 4 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 18 36 ns IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ -11 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 2.6 mV/°C ID = - 250 µA 2
Gate-Source Charge Qgs 1.8 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 2
Gate-Drain Charge Qgd 3.3 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 2
Body Diode Reverse Recovery Charge Qrr 816 nC IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 18 ns IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 10 ns IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI1417EDH-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: si1417edh-t1-ge3-vb-etched.step / si1417edh-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1417edh-t1-ge3-vb.step / si1417edh-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 b4abb3fd4a27b976, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF