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SI1411DH-T1-GE3

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Vishay Intertech MOSFETs, SC-70-6(SOT-363). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI1411DH-T1-GE3

Vishay Intertech · MOSFETs · SC-70-6(SOT-363)

SI1411DH-T1-GE3 from Vishay Intertech, in a SC-70-6(SOT-363). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the P-channel MOSFET, rated for VDS = -150 V with continuous drain current of -0.52 A at TA = 25 °C; this is one of four drain leads that lower on-resistance and junction-to-ambient thermal resistance.
2 D passive Drain of the P-channel MOSFET, rated for VDS = -150 V with continuous drain current of -0.52 A at TA = 25 °C; this is one of four drain leads that lower on-resistance and junction-to-ambient thermal resistance.
3 G input Gate of the P-channel MOSFET, with absolute maximum gate-source voltage of ±20 V.
4 S passive Source of the P-channel MOSFET, with continuous diode current rated at -1.3 A for 5 s and -0.83 A in steady state.
5 D passive Drain of the P-channel MOSFET, rated for VDS = -150 V with continuous drain current of -0.52 A at TA = 25 °C; this is one of four drain leads that lower on-resistance and junction-to-ambient thermal resistance.
6 D passive Drain of the P-channel MOSFET, rated for VDS = -150 V with continuous drain current of -0.52 A at TA = 25 °C; this is one of four drain leads that lower on-resistance and junction-to-ambient thermal resistance.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SC-70-6(SOT-363)
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -150 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TJ = 150 °C) ID -0.52 A TA = 25 °C, 5 s 1
Continuous Drain Current (TJ = 150 °C) ID -0.42 A TA = 25 °C, steady state 1
Continuous Drain Current (TJ = 150 °C) ID -0.38 A TA = 85 °C, 5 s 1
Continuous Drain Current (TJ = 150 °C) ID -0.3 A TA = 85 °C, steady state 1
Pulsed Drain Current IDM -0.8 A 1
Continuous Diode Current (Diode Conduction) IS -1.3 A 5 s 1
Continuous Diode Current (Diode Conduction) IS -0.83 A steady state 1
Single Pulse Avalanche Current IAS -2.1 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 0.22 mJ 1
Maximum Power Dissipation PD 1.56 W TA = 25 °C, 5 s 1
Maximum Power Dissipation PD 1 W TA = 25 °C, steady state 1
Maximum Power Dissipation PD 0.81 W TA = 85 °C, 5 s 1
Maximum Power Dissipation PD 0.52 W TA = 85 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 60 80 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient RthJA 100 125 °C/W steady state 1
Maximum Junction-to-Foot (Drain) RthJF 34 45 °C/W steady state 1
Gate Threshold Voltage VGS(th) -2.5 -4.5 V VDS = VGS, ID = -100 μA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -150 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 μA VDS = -150 V, VGS = 0 V, TJ = 85 °C 2
On-State Drain Current ID(on) -0.8 A VDS = -15 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 2.05 2.6 Ω VGS = -10 V, ID = -0.5 A 2
Drain-Source On-State Resistance RDS(on) 2.14 2.7 Ω VGS = -6 V, ID = -0.5 A 2
Diode Forward Voltage VSD -0.8 -1.1 V IS = -1.4 A, VGS = 0 V 2
Total Gate Charge Qg 4.2 6.3 nC VDS = -75 V, VGS = -10 V, ID = -0.5 A 2
Turn-On Delay Time td(on) 4.5 7 ns VDD = -75 V, RL = 75 Ω, ID -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Rise Time tr 11 17 ns 2
Turn-Off Delay Time td(off) 9 14 ns 2
Fall Time tf 11 17 ns 2
Reverse Recovery Time trr 36 55 ns IF = -0.5 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 65 100 nC 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version 7

CAD (KiCad official)

  • Symbol: SI1411DH-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6(SOT-363) (KiCad packages3D, STEP)
  • 3D model files: si1411dh-t1-ge3-etched.step / si1411dh-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1411dh-t1-ge3.step / si1411dh-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 e7c482c17dbf22e5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF