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SI1032X-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SC-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI1032X-T1-GE3
Vishay Intertech · MOSFETs · SC-89-3
SI1032X-T1-GE3 from Vishay Intertech, in a SC-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±6 V maximum with 2000 V HBM ESD protection, and threshold is 0.40 V min to 1.2 V max at 250 µA. |
| 2 | S | passive | Source; continuous source (diode conduction) current is 240 mA steady state for Si1032X. |
| 3 | D | passive | Drain; drain-source voltage is rated at 20 V, with continuous drain current of 200 mA steady state at TA = 25 °C for Si1032X. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SC-89-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -6 | 6 | V | 1 | ||
| Continuous Drain Current | ID | 210 | mA | TJ = 150 °C, TA = 25 °C, 5 s | 1 | ||
| Continuous Drain Current | ID | 200 | mA | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current | ID | 150 | mA | TJ = 150 °C, TA = 85 °C, 5 s | 1 | ||
| Continuous Drain Current | ID | 140 | mA | TJ = 150 °C, TA = 85 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | 600 | mA | Pulse test, note a | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 300 | mA | 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 240 | mA | steady state | 1 | ||
| Maximum Power Dissipation | PD | 340 | mW | TA = 25 °C, 5 s | 1 | ||
| Maximum Power Dissipation | PD | 300 | mW | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 170 | mW | TA = 85 °C, 5 s | 1 | ||
| Maximum Power Dissipation | PD | 150 | mW | TA = 85 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Gate-Source ESD Rating (HBM, Method 3015) | ESD | 2000 | V | HBM, Method 3015 | 1 | ||
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.2 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -1 | 0.5 | 1 | µA | VDS = 0 V, VGS = ±2.8 V | 2 |
| Gate-Body Leakage | IGSS | -3 | 1 | 3 | µA | VDS = 0 V, VGS = ±4.5 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 250 | mA | VDS = 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 5 | Ω | VGS = 4.5 V, ID = 200 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 7 | Ω | VGS = 2.5 V, ID = 175 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 9 | Ω | VGS = 1.8 V, ID = 150 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 10 | Ω | VGS = 1.5 V, ID = 40 mA | 2 | ||
| Forward Transconductance | gfs | 0.5 | S | VDS = 10 V, ID = 200 mA | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS = 150 mA, VGS = 0 V | 2 | ||
| Total Gate Charge | Qg | 750 | pC | VDS = 10 V, VGS = 4.5 V, ID = 250 mA | 2 | ||
| Gate-Source Charge | Qgs | 75 | pC | VDS = 10 V, VGS = 4.5 V, ID = 250 mA | 2 | ||
| Gate-Drain Charge | Qgd | 225 | pC | VDS = 10 V, VGS = 4.5 V, ID = 250 mA | 2 | ||
| Turn-On Delay Time | td(on) | 50 | ns | VDD = 10 V, RL = 47 Ω, ID 200 mA, VGEN = 4.5 V, Rg = 10 Ω | 2 | ||
| Rise Time | tr | 25 | ns | VDD = 10 V, RL = 47 Ω, ID 200 mA, VGEN = 4.5 V, Rg = 10 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 50 | ns | VDD = 10 V, RL = 47 Ω, ID 200 mA, VGEN = 4.5 V, Rg = 10 Ω | 2 | ||
| Fall Time | tf | 25 | ns | VDD = 10 V, RL = 47 Ω, ID 200 mA, VGEN = 4.5 V, Rg = 10 Ω | 2 |
CAD (KiCad official)
- Symbol:
SI1032X-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SC-89-3 (KiCad packages3D, STEP)
- 3D model files:
si1032x-t1-ge3-etched.step/si1032x-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si1032x-t1-ge3.step/si1032x-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
20a563152abd25ed, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).