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SH8K26-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SH8K26-HXY

HXY MOSFET · MOSFETs · SOP-8

SH8K26-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel), with drain-source voltage rated 40 V.
2 G1 input Gate of MOSFET 1, with gate-source voltage rated +20 V maximum and RDS(ON) specified at VGS=10 V and 4.5 V.
3 S2 passive Source of MOSFET 2 (N-channel), with drain-source voltage rated 40 V.
4 G2 input Gate of MOSFET 2, with gate-source voltage rated +20 V maximum and RDS(ON) specified at VGS=10 V and 4.5 V.
5 D2 passive Drain of MOSFET 2, with drain-source voltage rated 40 V and drain current of 12 A at TA=25℃.
6 D2 passive Drain of MOSFET 2, with drain-source voltage rated 40 V and drain current of 12 A at TA=25℃.
7 D1 passive Drain of MOSFET 1, with drain-source voltage rated 40 V and drain current of 12 A at TA=25℃.
8 D1 passive Drain of MOSFET 1, with drain-source voltage rated 40 V and drain current of 12 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 12 16 mΩ VGS=10V, ID=8A 2
Drain-Source On-State Resistance RDS(ON) 18.9 24 mΩ VGS=4.5V, ID=4A 2
Forward Transconductance gFS 33 S VDS=5V,ID=8A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS=0V,IS=9A 2
Drain-Source Voltage VDS 40 V Tj=25°C 1
Gate-Source Voltage VGS 20 V Tj=25°C; printed as +20 1
Drain Current ID@TA=25℃ 12 A VGS @ 4.5V 1
Drain Current ID@TA=70℃ 7 A VGS @ 4.5V 1
Pulsed Drain Current IDM 40 A 1
Total Power Dissipation PD@TA=25℃ 2.9 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 65 ℃/W 1
Input Capacitance Clss 964 PF VDS=20V,VGS=0V,F=1.0MHz 2
Output Capacitance Coss 109 PF VDS=20V,VGS=0V,F=1.0MHz 2
Reverse Transfer Capacitance Crss 96 PF VDS=20V,VGS=0V,F=1.0MHz 2
Turn-on Delay Time td(on) 5.5 nS VDD=20V, RL=2.5Ω VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 14 nS VDD=20V, RL=2.5Ω VGS=10V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 24 nS VDD=20V, RL=2.5Ω VGS=10V,RGEN=3Ω 2
Turn-Off Fall Time tf 12 nS VDD=20V, RL=2.5Ω VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 22.9 nC VDS=20V,ID=8A, VGS=10V 2
Gate-Source Charge Qgs 3.5 nC VDS=20V,ID=8A, VGS=10V 2
Gate-Drain Charge Qgd 5.3 nC VDS=20V,ID=8A, VGS=10V 2

CAD (KiCad official)

  • Symbol: SH8K26-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: sh8k26-hxy-etched.step / sh8k26-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sh8k26-hxy.step / sh8k26-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 05cb4720cdb729ef, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF