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SG-9101CG 100.00MHzC05PHAAA

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Seiko Epson Oscillators, SMD2520-4P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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SG-9101CG 100.00MHzC05PHAAA

Seiko Epson · Oscillators · SMD2520-4P

SG-9101CG 100.00MHzC05PHAAA from Seiko Epson, in a SMD2520-4P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OE input Output enable: high outputs the specified frequency on OUT, low sets OUT low (weak pull down) with only the output driver disabled; VIH 70 % VCC min, VIL 30 % VCC max.
2 GND power_in Ground; place a 0.1 μF capacitor between VCC and GND for optimum jitter performance.
3 OUT output Clock output (CMOS) with VOH 90 % VCC min, VOL 10 % VCC max and 15 pF max load.
4 VCC power_in Power supply, 1.62 V to 3.63 V; decouple to GND with a 0.1 μF capacitor placed close to the device.

Key specifications

Parameter Value
Manufacturer Seiko Epson
Package SMD2520-4P
Category Crystals/Oscillators/Resonators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage (1.8 V) VCC 1.62 1.8 1.98 V 1.80 V Typ. 1
Supply voltage (1.98-2.20 V) VCC 1.98 2.2 V 1.98 V to 2.20 V 1
Supply voltage (2.5 V) VCC 2.2 2.5 2.8 V 2.50 V Typ. 1
Supply voltage (3.3 V) VCC 2.7 3.3 3.63 V 3.30 V Typ. 1
Operating temperature T_use -40 105 ºC Code H: -40 ºC to +105 ºC 1
Storage temperature T_stg -40 125 ºC Storage as single product. 1
Frequency tolerance f_tol -50 50 ×10-6 Average frequency of 1s gate time. 1
Current consumption, 1.8 V, 20 MHz ICC 2.9 3.4 mA 1.62-1.98 V; No load, fo = 20 MHz; max T_use = +105 ºC, typ T_use = +25 ºC 1
Current consumption, 1.98-2.20 V, 20 MHz ICC 3.5 mA 1.98-2.20 V; No load, fo = 20 MHz; T_use = +105 ºC 1
Current consumption, 2.5 V, 20 MHz ICC 3 3.6 mA 2.20-2.80 V; No load, fo = 20 MHz; max T_use = +105 ºC, typ T_use = +25 ºC 1
Current consumption, 3.3 V, 20 MHz ICC 3.2 3.7 mA 2.70-3.63 V; No load, fo = 20 MHz; max T_use = +105 ºC, typ T_use = +25 ºC 1
Current consumption, 1.8 V, 170 MHz ICC 4.9 5.7 mA 1.62-1.98 V; No load, fo = 170 MHz; max T_use = +105 ºC, typ T_use = +25 ºC 1
Current consumption, 1.98-2.20 V, 170 MHz ICC 6 mA 1.98-2.20 V; No load, fo = 170 MHz; T_use = +105 ºC 1
Current consumption, 2.5 V, 170 MHz ICC 5.9 6.9 mA 2.20-2.80 V; No load, fo = 170 MHz; max T_use = +105 ºC, typ T_use = +25 ºC 1
Current consumption, 3.3 V, 170 MHz ICC 7 8.3 mA 2.70-3.63 V; No load, fo = 170 MHz; max T_use = +105 ºC, typ T_use = +25 ºC 1
Output disable current, 1.62-1.98 V I_dis 3.4 mA 1.62-1.98 V; OE = GND, fo = 170 MHz 1
Output disable current, 1.98-2.20 V I_dis 3.4 mA 1.98-2.20 V; OE = GND, fo = 170 MHz 1
Output disable current, 2.20-2.80 V I_dis 3.5 mA 2.20-2.80 V; OE = GND, fo = 170 MHz 1
Output disable current, 2.70-3.63 V I_dis 3.7 mA 2.70-3.63 V; OE = GND, fo = 170 MHz 1
Standby current, 1.8 V I_std 0.3 0.9 μA 1.62-1.98 V; ST = GND; max T_use = +105 ºC, typ T_use = +25 ºC 1
Standby current, 1.98-2.20 V I_std 0.4 1 μA 1.98-2.20 V; ST = GND; max T_use = +105 ºC, typ T_use = +25 ºC 1
Standby current, 2.5 V I_std 0.5 1.5 μA 2.20-2.80 V; ST = GND; max T_use = +105 ºC, typ T_use = +25 ºC 1
Standby current, 3.3 V I_std 1.1 2.5 μA 2.70-3.63 V; ST = GND; max T_use = +105 ºC, typ T_use = +25 ºC 1
Symmetry SYM 45 55 % 50 % VCC Level 1
Output voltage high VOH 90 % VCC 1
Output voltage low VOL 10 % VCC 1
Output load condition L_CMOS 15 pF 1
Input voltage high (OE or ST) VIH 70 % VCC 1
Input voltage low (OE or ST) VIL 30 % VCC 1
Rise/Fall time, Default tr/tf 3 ns fo > 40 MHz; 20 % - 80 % VCC, L_CMOS = 15 pF 1
Disable time t_stp 1 μs Measured from the time OE or ST pin crosses 30 % VCC 1
Enable time t_sta 1 μs Measured from the time OE pin crosses 70 % VCC 1
Resume time t_res 3 ms Measured from the time ST pin crosses 70 % VCC 1
Start-up time t_str 3 ms Measured from the time VCC reaches its rated minimum value, 1.62 V 1
ESD breakdown voltage, HBM 2000 V Human Body Model (HBM) 6
ESD breakdown voltage, MM 250 V Machine Model (MM) 6
ESD breakdown voltage, CDM 750 V Charged Device Model (CDM) 6

CAD (KiCad official)

  • Symbol: SG-9101CG 100.00MHzC05PHAAA
  • Footprint: Crystal:Crystal_SMD_2520-4Pin_2.5x2.0mm
  • 3D model: SMD2520-4P (KiCad packages3D, STEP)
  • 3D model files: sg-9101cg-100-00mhzc05phaaa-etched.step / sg-9101cg-100-00mhzc05phaaa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sg-9101cg-100-00mhzc05phaaa.step / sg-9101cg-100-00mhzc05phaaa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Seiko Epson datasheet (8 pp, sha256 8c38d86b95e1a58e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF