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SG-8018CE 33.333333MHz TJHPA

Public Made by Adom

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Seiko Epson Pre-programmed Oscillators, SMD3225-4P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentcrystals-oscillators-resonatorssg-8018ce 33.333333mhz tjhpafactory-2.0.0extractor-text
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Contents

README

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SG-8018CE 33.333333MHz TJHPA

Seiko Epson · Pre-programmed Oscillators · SMD3225-4P

SG-8018CE 33.333333MHz TJHPA from Seiko Epson, in a SMD3225-4P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OE input Output enable: High gives the specified frequency at OUT, and Low forces OUT low with a weak pull-down while disabling only the output driver, with disable and enable times of 1 µs max measured at 30% and 70% VCC.
2 GND power_in Ground reference for the oscillator, and the 0.1 µF VCC-to-GND capacitor should be placed as close to the device as possible for optimum jitter.
3 OUT output CMOS clock output that drives a 15 pF max load, with VOH of 90% VCC min, VOL of 10% VCC max, and rise/fall time set by the Default, Fast or Slow ordering option.
4 VCC power_in Power supply pin with a rated supply range of 1.62 V to 3.63 V.

Key specifications

Parameter Value
Manufacturer Seiko Epson
Package SMD3225-4P
Category Crystals/Oscillators/Resonators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Frequency tolerance f_tol -50 50 × 10-6 T_use = -40 ºC ~ +105 ºC 1
Symmetry SYM 45 55 % 50 % VCC Level 1
Output voltage high (Default, fO ≤ 40 MHz) VOH 90 % VCC Default, fO ≤ 40 MHz; IOH -1.5 / -2.0 / -2.5 / -3.0 mA for *A / *B / *C / *D 1
Output voltage low (Default, fO ≤ 40 MHz) VOL 10 % VCC Default, fO ≤ 40 MHz; IOL 1.5 / 2.0 / 2.5 / 3.0 mA for *A / *B / *C / *D 1
Output load condition L_CMOS 15 pF 1
Input voltage high (OE or ST) VIH 70 % VCC OE or ST pin 1
Input voltage low (OE or ST) VIL 30 % VCC OE or ST pin 1
Rise/Fall time (Default, fO ≤ 40 MHz) tr/tf 6 ns Default, fO ≤ 40 MHz; 20 % - 80 % VCC, L_CMOS = 15 pF 1
Disable time t_stp 1 μs Measured from the time OE or ST pin crosses 30 % VCC 1
Enable time t_sta 1 μs Measured from the time OE pin crosses 70 % VCC 1
Resume time t_res 3 ms Measured from the time ST pin crosses 70 % VCC 1
Start-up time t_str 3 ms Measured from the time VCC reaches its rated minimum value, 1.62 V 1
Current consumption (fO = 20 MHz) ICC 3.2 mA VCC 1.62 V ~ 1.98 V; T_use = +105 ºC; No load, fO = 20 MHz 1
Current consumption (fO = 20 MHz) ICC 3.3 mA VCC 1.98 V ~ 2.20 V; T_use = +105 ºC; No load, fO = 20 MHz 1
Current consumption (fO = 20 MHz) ICC 3.4 mA VCC 2.20 V ~ 2.80 V; T_use = +105 ºC; No load, fO = 20 MHz 1
Current consumption (fO = 20 MHz) ICC 3.5 mA VCC 2.70 V ~ 3.63 V; T_use = +105 ºC; No load, fO = 20 MHz 1
Current consumption (fO = 170 MHz) ICC 5.5 mA VCC 1.62 V ~ 1.98 V; T_use = +105 ºC; No load, fO = 170 MHz 1
Current consumption (fO = 170 MHz) ICC 5.8 mA VCC 1.98 V ~ 2.20 V; T_use = +105 ºC; No load, fO = 170 MHz 1
Current consumption (fO = 170 MHz) ICC 6.7 mA VCC 2.20 V ~ 2.80 V; T_use = +105 ºC; No load, fO = 170 MHz 1
Current consumption (fO = 170 MHz) ICC 8.1 mA VCC 2.70 V ~ 3.63 V; T_use = +105 ºC; No load, fO = 170 MHz 1
Output disable current I_dis 3.2 mA VCC 1.62 V ~ 1.98 V; OE = GND, fO = 170 MHz 1
Output disable current I_dis 3.3 mA VCC 2.20 V ~ 2.80 V; OE = GND, fO = 170 MHz 1
Output disable current I_dis 3.5 mA VCC 2.70 V ~ 3.63 V; OE = GND, fO = 170 MHz 1
Standby current I_std 0.9 μA VCC 1.62 V ~ 1.98 V; T_use = +105 ºC; ST = GND 1
Standby current I_std 1 μA VCC 1.98 V ~ 2.20 V; T_use = +105 ºC; ST = GND 1
Standby current I_std 1.5 μA VCC 2.20 V ~ 2.80 V; T_use = +105 ºC; ST = GND 1
Standby current I_std 2.5 μA VCC 2.70 V ~ 3.63 V; T_use = +105 ºC; ST = GND 1
Supply voltage VCC 1.62 3.63 V 1
Output frequency range fO 0.67 170 MHz 1
Operating temperature T_use -40 105 ºC 1
Storage temperature T_stg -40 125 ºC Storage as single product 1
ESD HBM breakdown voltage 2000 V Human Body Model (HBM) 6
ESD MM breakdown voltage 250 V Machine Model (MM) 6
ESD CDM breakdown voltage 750 V Charged Device Model (CDM) 6
Reflow peak temperature 260 °C SG-8018CE peak temp (Max), MSL rating 1, Pb free 7

CAD (KiCad official)

  • Symbol: SG-8018CE 33.333333MHz TJHPA
  • Footprint: Crystal:Crystal_SMD_3225-4Pin_3.2x2.5mm
  • 3D model: SMD3225-4P (KiCad packages3D, STEP)
  • 3D model files: sg-8018ce-33-333333mhz-tjhpa-etched.step / sg-8018ce-33-333333mhz-tjhpa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sg-8018ce-33-333333mhz-tjhpa.step / sg-8018ce-33-333333mhz-tjhpa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Seiko Epson datasheet (8 pp, sha256 0f88f429647adbb6, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF