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README

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SG-8018CE 20.000000MHz TJHSA

Seiko Epson · Programmable Oscillators · SMD3225-4P

SG-8018CE 20.000000MHz TJHSA from Seiko Epson, in a SMD3225-4P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ST input Standby control input for the S (Standby) function variant: High gives the specified frequency output on OUT, and Low forces OUT low (weak pull-down) and puts the device in standby with supply current reduced to I_std, with VIH at 70% VCC min and VIL at 30% VCC max.
2 GND power_in Ground reference; the 0.1 µF capacitor between VCC and GND should be placed on the device side of the PCB as close to the device as possible with short wiring.
3 OUT output CMOS clock output with VOH min 90% VCC and VOL max 10% VCC, specified for a maximum load of 15 pF.
4 VCC power_in Power supply input, rated 1.62 V to 3.63 V, with a 0.1 µF decoupling capacitor to GND recommended for optimum jitter.

Key specifications

Parameter Value
Manufacturer Seiko Epson
Package SMD3225-4P
Category Crystals, Oscillators, Resonators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Frequency tolerance (J: ±50 × 10-6) f_tol -50 50 × 10-6 T_use = -40 ºC ~ +105 ºC 1
Supply voltage VCC (rated range) VCC 1.62 3.63 V 1
Output frequency range fO 0.67 170 MHz 1
Operating temperature T_use -40 105 ºC 1
Storage temperature T_stg -40 125 ºC Storage as single product. 1
Current consumption ICC (max), VCC 1.62 V ~ 1.98 V ICC 3.2 mA VCC 1.62 V ~ 1.98 V; T_use = +105 ºC; No load, fO = 20 MHz 1
Current consumption ICC (max), VCC 1.98 V ~ 2.20 V ICC 3.3 mA VCC 1.98 V ~ 2.20 V; T_use = +105 ºC; No load, fO = 20 MHz 1
Current consumption ICC (max), VCC 2.20 V ~ 2.80 V ICC 3.4 mA VCC 2.20 V ~ 2.80 V; T_use = +105 ºC; No load, fO = 20 MHz 1
Current consumption ICC (max), VCC 2.70 V ~ 3.63 V ICC 3.5 mA VCC 2.70 V ~ 3.63 V; T_use = +105 ºC; No load, fO = 20 MHz 1
Standby current I_std (max), VCC 1.62 V ~ 1.98 V I_std 0.9 μA VCC 1.62 V ~ 1.98 V; T_use = +105 ºC; ST¯¯ = GND 1
Standby current I_std (max), VCC 1.98 V ~ 2.20 V I_std 1 μA VCC 1.98 V ~ 2.20 V; T_use = +105 ºC; ST¯¯ = GND 1
Standby current I_std (max), VCC 2.20 V ~ 2.80 V I_std 1.5 μA VCC 2.20 V ~ 2.80 V; T_use = +105 ºC; ST¯¯ = GND 1
Standby current I_std (max), VCC 2.70 V ~ 3.63 V I_std 2.5 μA VCC 2.70 V ~ 3.63 V; T_use = +105 ºC; ST¯¯ = GND 1
Symmetry SYM 45 55 % 50 % VCC Level 1
Output voltage high VOH VOH 90 % VCC Default (fO ≤ 40 MHz); IOH -1.5 (*A) / -2.0 (*B) / -2.5 (*C) / -3.0 (*D) mA 1
Output voltage low VOL VOL 10 % VCC Default (fO ≤ 40 MHz); IOL 1.5 (*A) / 2.0 (*B) / 2.5 (*C) / 3.0 (*D) mA 1
Output load condition L_CMOS 15 pF 1
Input voltage high VIH VIH 70 % VCC OE or ST¯¯ 1
Input voltage low VIL VIL 30 % VCC OE or ST¯¯ 1
Rise/fall time (Default, fO ≤ 40 MHz) tr/tf 6 ns Default fO ≤ 40 MHz; 20 % - 80 % VCC, L_CMOS = 15 pF 1
Disable time t_stp 1 μs Measured from the time OE or ST¯¯ pin crosses 30 % VCC 1
Resume time t_res 3 ms Measured from the time ST¯¯ pin crosses 70 % VCC 1
Start-up time t_str 3 ms Measured from the time VCC reaches its rated minimum value, 1.62 V 1
ESD breakdown voltage, Human Body Model (HBM) 2000 V Human Body Model (HBM) 6
ESD breakdown voltage, Machine Model (MM) 250 V Machine Model (MM) 6
ESD breakdown voltage, Charged Device Model (CDM) 750 V Charged Device Model (CDM) 6
Current consumption ICC (typ), 1.80 V ICC 2.7 mA 1.80 V Typ.; T_use = +25 ºC; No load, fO = 20 MHz 1
Current consumption ICC (typ), 2.50 V ICC 2.9 mA 2.50 V Typ.; T_use = +25 ºC; No load, fO = 20 MHz 1
Current consumption ICC (typ), 3.30 V ICC 3 mA 3.30 V Typ.; T_use = +25 ºC; No load, fO = 20 MHz 1
Standby current I_std (typ), VCC 1.62 V ~ 1.98 V I_std 0.3 μA VCC 1.62 V ~ 1.98 V; T_use = +25 ºC; ST¯¯ = GND 1
Standby current I_std (typ), VCC 1.98 V ~ 2.20 V I_std 0.4 μA VCC 1.98 V ~ 2.20 V; T_use = +25 ºC; ST¯¯ = GND 1
Standby current I_std (typ), VCC 2.20 V ~ 2.80 V I_std 0.5 μA VCC 2.20 V ~ 2.80 V; T_use = +25 ºC; ST¯¯ = GND 1
Standby current I_std (typ), VCC 2.70 V ~ 3.63 V I_std 1.1 μA VCC 2.70 V ~ 3.63 V; T_use = +25 ºC; ST¯¯ = GND 1
Nominal output frequency for this MPN fO 20 MHz 1

CAD (KiCad official)

  • Symbol: SG-8018CE 20.000000MHz TJHSA
  • Footprint: Crystal:Crystal_SMD_3225-4Pin_3.2x2.5mm
  • 3D model: SMD3225-4P (KiCad packages3D, STEP)
  • 3D model files: sg-8018ce-20-000000mhz-tjhsa-etched.step / sg-8018ce-20-000000mhz-tjhsa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sg-8018ce-20-000000mhz-tjhsa.step / sg-8018ce-20-000000mhz-tjhsa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Seiko Epson datasheet (8 pp, sha256 e88ada67e9e8e3c9, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF