component
SFS06R03DF
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ORIENTAL SEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SFS06R03DF
ORIENTAL SEMI · MOSFETs · TO-252
SFS06R03DF from ORIENTAL SEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of 1.3 V min to 2.5 V max at ID=250 μA. |
| 2 | D | passive | Drain; connected to the exposed tab, with VDS rated at 60 V and continuous drain current of 160 A at TC=25 °C. |
| 3 | S | passive | Source; the current return terminal, with continuous body-diode forward current of 160 A at TC=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ORIENTAL SEMI |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain source voltage | VDS | 60 | V | Tj=25°C | 2 | ||
| Gate source voltage | VGS | -20 | 20 | V | Tj=25°C | 2 | |
| Continuous drain current | ID | 160 | A | TC=25 °C | 2 | ||
| Pulsed drain current | ID, pulse | 480 | A | TC=25 °C | 2 | ||
| Continuous diode forward current | IS | 160 | A | TC=25 °C | 2 | ||
| Diode pulsed current | IS, Pulse | 480 | A | TC=25 °C | 2 | ||
| Power dissipation | PD | 168 | W | TC=25 °C | 2 | ||
| Single pulsed avalanche energy | EAS | 200 | mJ | VDD=30 V, VGS=10 V, L=0.3 mH, starting Tj=25 °C | 2 | ||
| Operation and storage temperature | Tstg, Tj | -55 | 175 | °C | 2 | ||
| Thermal resistance, junction-case | RθJC | 0.89 | °C/W | 2 | |||
| Thermal resistance, junction-ambient | RθJA | 62 | °C/W | 1 in2 FR-4 board, 2oz. Copper, still air, Ta=25 °C | 2 | ||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0 V, ID=250 μA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.3 | 2.5 | V | VDS=VGS, ID=250 μA | 2 | |
| Drain-source on-state resistance | RDS(ON) | 3 | 3.5 | mΩ | VGS=10 V, ID=20 A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 3.5 | 4.5 | mΩ | VGS=4.5 V, ID=10 A | 2 | |
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS=20 V / VGS=-20 V | 2 | |
| Drain-source leakage current | IDSS | 1 | μA | VDS=60 V, VGS=0 V | 2 | ||
| Diode forward voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V | 3 | ||
| Input capacitance | Ciss | 5377 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz | 3 | ||
| Output capacitance | Coss | 1666 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz | 3 | ||
| Reverse transfer capacitance | Crss | 77.7 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz | 3 | ||
| Turn-on delay time | td(on) | 22.5 | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A | 3 | ||
| Rise time | tr | 6.7 | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A | 3 | ||
| Turn-off delay time | td(off) | 80.3 | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A | 3 | ||
| Fall time | tf | 26.8 | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A | 3 | ||
| Total gate charge | Qg | 66.1 | nC | VGS=10 V, VDS=30 V, ID=25 A | 3 | ||
| Gate-source charge | Qgs | 10.7 | nC | VGS=10 V, VDS=30 V, ID=25 A | 3 | ||
| Gate-drain charge | Qgd | 10.9 | nC | VGS=10 V, VDS=30 V, ID=25 A | 3 | ||
| Gate plateau voltage | Vplateau | 2.9 | V | VGS=10 V, VDS=30 V, ID=25 A | 3 | ||
| Reverse recovery time | trr | 68.3 | ns | VR=30 V, IS=25 A, di/dt=100 A/μs | 3 | ||
| Reverse recovery charge | Qrr | 73 | nC | VR=30 V, IS=25 A, di/dt=100 A/μs | 3 | ||
| Peak reverse recovery current | Irrm | 1.9 | A | VR=30 V, IS=25 A, di/dt=100 A/μs | 3 |
CAD (KiCad official)
- Symbol:
SFS06R03DF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sfs06r03df-etched.step/sfs06r03df-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sfs06r03df.step/sfs06r03df.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ORIENTAL SEMI datasheet (9 pp, sha256
9be6988cdfc0737b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SFS06R03DF
**ORIENTAL SEMI** · MOSFETs · TO-252
SFS06R03DF from ORIENTAL SEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of 1.3 V min to 2.5 V max at ID=250 μA. |
| 2 | D | passive | Drain; connected to the exposed tab, with VDS rated at 60 V and continuous drain current of 160 A at TC=25 °C. |
| 3 | S | passive | Source; the current return terminal, with continuous body-diode forward current of 160 A at TC=25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ORIENTAL SEMI |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain source voltage | VDS | | | 60 | V | Tj=25°C | 2 |
| Gate source voltage | VGS | -20 | | 20 | V | Tj=25°C | 2 |
| Continuous drain current | ID | | | 160 | A | TC=25 °C | 2 |
| Pulsed drain current | ID, pulse | | | 480 | A | TC=25 °C | 2 |
| Continuous diode forward current | IS | | | 160 | A | TC=25 °C | 2 |
| Diode pulsed current | IS, Pulse | | | 480 | A | TC=25 °C | 2 |
| Power dissipation | PD | | | 168 | W | TC=25 °C | 2 |
| Single pulsed avalanche energy | EAS | | | 200 | mJ | VDD=30 V, VGS=10 V, L=0.3 mH, starting Tj=25 °C | 2 |
| Operation and storage temperature | Tstg, Tj | -55 | | 175 | °C | | 2 |
| Thermal resistance, junction-case | RθJC | | | 0.89 | °C/W | | 2 |
| Thermal resistance, junction-ambient | RθJA | | | 62 | °C/W | 1 in2 FR-4 board, 2oz. Copper, still air, Ta=25 °C | 2 |
| Drain-source breakdown voltage | BVDSS | 60 | | | V | VGS=0 V, ID=250 μA | 2 |
| Gate threshold voltage | VGS(th) | 1.3 | | 2.5 | V | VDS=VGS, ID=250 μA | 2 |
| Drain-source on-state resistance | RDS(ON) | | 3 | 3.5 | mΩ | VGS=10 V, ID=20 A | 2 |
| Drain-source on-state resistance | RDS(ON) | | 3.5 | 4.5 | mΩ | VGS=4.5 V, ID=10 A | 2 |
| Gate-source leakage current | IGSS | -100 | | 100 | nA | VGS=20 V / VGS=-20 V | 2 |
| Drain-source leakage current | IDSS | | | 1 | μA | VDS=60 V, VGS=0 V | 2 |
| Diode forward voltage | VSD | | | 1.3 | V | IS=20 A, VGS=0 V | 3 |
| Input capacitance | Ciss | | 5377 | | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz | 3 |
| Output capacitance | Coss | | 1666 | | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz | 3 |
| Reverse transfer capacitance | Crss | | 77.7 | | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz | 3 |
| Turn-on delay time | td(on) | | 22.5 | | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A | 3 |
| Rise time | tr | | 6.7 | | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A | 3 |
| Turn-off delay time | td(off) | | 80.3 | | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A | 3 |
| Fall time | tf | | 26.8 | | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A | 3 |
| Total gate charge | Qg | | 66.1 | | nC | VGS=10 V, VDS=30 V, ID=25 A | 3 |
| Gate-source charge | Qgs | | 10.7 | | nC | VGS=10 V, VDS=30 V, ID=25 A | 3 |
| Gate-drain charge | Qgd | | 10.9 | | nC | VGS=10 V, VDS=30 V, ID=25 A | 3 |
| Gate plateau voltage | Vplateau | | 2.9 | | V | VGS=10 V, VDS=30 V, ID=25 A | 3 |
| Reverse recovery time | trr | | 68.3 | | ns | VR=30 V, IS=25 A, di/dt=100 A/μs | 3 |
| Reverse recovery charge | Qrr | | 73 | | nC | VR=30 V, IS=25 A, di/dt=100 A/μs | 3 |
| Peak reverse recovery current | Irrm | | 1.9 | | A | VR=30 V, IS=25 A, di/dt=100 A/μs | 3 |
## CAD (KiCad official)
- Symbol: `SFS06R03DF`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sfs06r03df-etched.step` / `sfs06r03df-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sfs06r03df.step` / `sfs06r03df.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ORIENTAL SEMI datasheet](docs/sfs06r03df-datasheet.pdf) (9 pp, sha256 `9be6988cdfc0737b`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sfs06r03df-datasheet.pdf)