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SFH617A-2X006

Public Made by Adom

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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SFH617A-2X006

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-4

SFH617A-2X006 from Vishay Intertech, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the GaAs infrared LED emitter; the LED is rated for a maximum forward current of 60 mA and a maximum reverse voltage of 6 V.
2 C passive Cathode of the GaAs infrared LED emitter; the LED is rated for a maximum forward current of 60 mA and a maximum reverse voltage of 6 V.
3 E passive Emitter of the silicon phototransistor detector; the output side is rated for a collector-emitter voltage VCEO of 70 V, an emitter-collector voltage VECO of 7 V, and a collector current of 50 mA.
4 C passive Collector of the silicon phototransistor detector; the output side is rated for a collector-emitter voltage VCEO of 70 V and a collector current of 50 mA (100 mA peak).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operation temperature Tamb -55 110 °C 2
Collector emitter voltage VCEO 70 V 2
Forward surge current IFSM 2.5 A tp ≤ 10 μs 2
Reverse voltage VR 6 V 2
Forward current IF 60 mA 2
LED power dissipation at 25 °C Pdiss 70 mW 2
Emitter collector voltage VECO 7 V 2
Collector current IC 50 mA 2
Collector peak current ICM 100 mA tp/T = 0.5, tp ≤ 10 ms 2
Ouput power dissipation at 25 °C Pdiss 150 mW 2
Storage temperature range Tstg -55 150 °C 2
Soldering temperature Tsld 260 °C 2 mm from case, ≤ 10 s 2
Current transfer ratio, SFH617A-2 CTR 63 125 % IF = 10 mA, VCE = 5 V 3
Current transfer ratio, SFH617A-2 CTR 22 45 % IF = 1 mA, VCE = 5 V 3
Forward voltage VF 1.35 1.65 V IF = 60 mA 2
Reverse current IR 0.01 10 μA VR = 6 V 2
Collector emitter leakage current, SFH617A-2 ICEO 2 50 nA VCE = 10 V 2
Collector emitter saturation voltage VCEsat 0.25 0.4 V IF = 10 mA, f = 1 MHz 2
Capacitance CO 13 pF VR = 0 V, f = 1 MHz 2
Collector emitter capacitance CCE 5.2 pF VCE = 5 V, f = 1 MHz 2
Coupling capacitance CC 0.4 pF 2
Turn-on time (non-saturated) ton 3 μs IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Rise time (non-saturated) tr 2 μs IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Turn-off time (non-saturated) toff 2.3 μs IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Fall time (non-saturated) tf 2 μs IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Cut-off frequency fCO 100 kHz IF = 10 mA, VCC = 5 V 3
Turn-on time (saturated), SFH617A-2 ton 4.2 μs IF = 10 mA 3
Rise time (saturated), SFH617A-2 tr 3 μs IF = 10 mA 3
Turn-off time (saturated), SFH617A-2 toff 23 μs IF = 10 mA 3
Fall time (saturated), SFH617A-2 tf 14 μs IF = 10 mA 3

CAD (KiCad official)

  • Symbol: SFH617A-2X006
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: sfh617a-2x006-etched.step / sfh617a-2x006-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sfh617a-2x006.step / sfh617a-2x006.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 3e4ea1b1be1db6f2, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF