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SFH610A-2
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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SFH610A-2
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-4
SFH610A-2 from Vishay Intertech, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the GaAs infrared emitter diode; the input is rated for a reverse voltage VR of 6 V and a DC forward current IF of 60 mA. |
| 2 | C | passive | Cathode of the GaAs infrared emitter diode; the input is rated for a reverse voltage VR of 6 V and a DC forward current IF of 60 mA. |
| 3 | E | passive | Emitter of the silicon phototransistor output; the output is rated for a collector-emitter voltage VCEO of 70 V, an emitter-collector voltage VECO of 7 V and a collector current IC of 50 mA. |
| 4 | C | passive | Collector of the silicon phototransistor output; the output is rated for a collector-emitter voltage VCEO of 70 V, an emitter-collector voltage VECO of 7 V and a collector current IC of 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 1.25 | 1.65 | V | IF = 60 mA | 2 | |
| Reverse current | IR | 0.01 | 10 | μA | VR = 6 V | 2 | |
| Collector emitter leakage current (SFH610A-2) | ICEO | 2 | 50 | nA | VCE = 10 V | 2 | |
| Collector emitter saturation voltage | VCEsat | 0.25 | 0.4 | V | IF = 10 mA, IC = 2.5 mA | 2 | |
| Current transfer ratio (SFH610A-2) | CTR | 63 | 125 | % | IF = 10 mA, VCE = 5.0 V | 3 | |
| Current transfer ratio (SFH610A-2) | CTR | 22 | 45 | % | IF = 1 mA, VCE = 5 V | 3 | |
| Reverse voltage | VR | 6 | V | 2 | |||
| DC forward current | IF | 60 | mA | 2 | |||
| Surge forward current | IFSM | 2.5 | A | t ≤ 10 μs | 2 | ||
| Power dissipation (input) | Pdiss | 100 | mW | 2 | |||
| Collector emitter voltage | VCEO | 70 | V | 2 | |||
| Emitter collector voltage | VECO | 7 | V | 2 | |||
| Collector current | IC | 50 | mA | 2 | |||
| Collector current (pulsed) | IC | 100 | mA | tp ≤ 1.0 ms | 2 | ||
| Power dissipation (output) | Pdiss | 150 | mW | 2 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Ambient temperature range | Tamb | -55 | 100 | °C | 2 | ||
| Soldering temperature | Tsld | 260 | °C | max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm | 2 | ||
| Thermal resistance (input) | Rthja | 750 | K/W | 2 | |||
| Thermal resistance (output) | Rthja | 500 | K/W | 2 |
CAD (KiCad official)
- Symbol:
SFH610A-2 - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
sfh610a-2-etched.step/sfh610a-2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sfh610a-2.step/sfh610a-2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
607e614106287270, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SFH610A-2
**Vishay Intertech** · Transistor, Photovoltaic Output Optoisolators · DIP-4
SFH610A-2 from Vishay Intertech, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the GaAs infrared emitter diode; the input is rated for a reverse voltage VR of 6 V and a DC forward current IF of 60 mA. |
| 2 | C | passive | Cathode of the GaAs infrared emitter diode; the input is rated for a reverse voltage VR of 6 V and a DC forward current IF of 60 mA. |
| 3 | E | passive | Emitter of the silicon phototransistor output; the output is rated for a collector-emitter voltage VCEO of 70 V, an emitter-collector voltage VECO of 7 V and a collector current IC of 50 mA. |
| 4 | C | passive | Collector of the silicon phototransistor output; the output is rated for a collector-emitter voltage VCEO of 70 V, an emitter-collector voltage VECO of 7 V and a collector current IC of 50 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | | 1.25 | 1.65 | V | IF = 60 mA | 2 |
| Reverse current | IR | | 0.01 | 10 | μA | VR = 6 V | 2 |
| Collector emitter leakage current (SFH610A-2) | ICEO | | 2 | 50 | nA | VCE = 10 V | 2 |
| Collector emitter saturation voltage | VCEsat | | 0.25 | 0.4 | V | IF = 10 mA, IC = 2.5 mA | 2 |
| Current transfer ratio (SFH610A-2) | CTR | 63 | | 125 | % | IF = 10 mA, VCE = 5.0 V | 3 |
| Current transfer ratio (SFH610A-2) | CTR | 22 | 45 | | % | IF = 1 mA, VCE = 5 V | 3 |
| Reverse voltage | VR | | | 6 | V | | 2 |
| DC forward current | IF | | | 60 | mA | | 2 |
| Surge forward current | IFSM | | | 2.5 | A | t ≤ 10 μs | 2 |
| Power dissipation (input) | Pdiss | | | 100 | mW | | 2 |
| Collector emitter voltage | VCEO | | | 70 | V | | 2 |
| Emitter collector voltage | VECO | | | 7 | V | | 2 |
| Collector current | IC | | | 50 | mA | | 2 |
| Collector current (pulsed) | IC | | | 100 | mA | tp ≤ 1.0 ms | 2 |
| Power dissipation (output) | Pdiss | | | 150 | mW | | 2 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |
| Ambient temperature range | Tamb | -55 | | 100 | °C | | 2 |
| Soldering temperature | Tsld | | | 260 | °C | max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm | 2 |
| Thermal resistance (input) | Rthja | | 750 | | K/W | | 2 |
| Thermal resistance (output) | Rthja | | 500 | | K/W | | 2 |
## CAD (KiCad official)
- Symbol: `SFH610A-2`
- Footprint: `Package_DIP:DIP-4_W7.62mm`
- 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files: `sfh610a-2-etched.step` / `sfh610a-2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sfh610a-2.step` / `sfh610a-2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590234038163173376) (9 pp, sha256 `607e614106287270`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sfh610a-2-datasheet.pdf)