component
SF66G
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Fast Recovery / High Efficiency Diodes, R-6. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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SF66G
Yangzhou Yangjie Elec Tech · Fast Recovery / High Efficiency Diodes · R-6
SF66G from Yangzhou Yangjie Elec Tech, in a R-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | R-6 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum instantaneous forward voltage drop per diode | VF | 1.3 | V | IFM=6.0A | 1 | ||
| Maximum DC reverse current at rated DC blocking voltage per diode, Ta=25℃ | IR | 5 | μA | Ta=25℃ | 1 | ||
| Maximum DC reverse current at rated DC blocking voltage per diode, Ta=100℃ | IR | 150 | μA | Ta=100℃ | 1 | ||
| Reverse recovery time | trr | 35 | ns | IF=0.5A IR=1A IRR=0.25A | 1 | ||
| Repetitive peak reverse voltage | VRRM | 400 | V | 1 | |||
| Average forward current | IF(AV) | 6 | A | @60Hz sine wave, Resistance load, Ta=65℃ | 1 | ||
| Forward surge current (non-repetitive) | IFSM | 150 | A | @60Hz Half-sine wave, 1 cycle, Ta=25℃ | 1 | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RθJ-A | 12 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
SF66G - Footprint:
Diode_THT:D_P600_R-6_P20.00mm_Horizontal - 3D model: R-6 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (4 pp, sha256
bc2143c299babc26, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SF66G
**Yangzhou Yangjie Elec Tech** · Fast Recovery / High Efficiency Diodes · R-6
SF66G from Yangzhou Yangjie Elec Tech, in a R-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | R-6 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum instantaneous forward voltage drop per diode | VF | | | 1.3 | V | IFM=6.0A | 1 |
| Maximum DC reverse current at rated DC blocking voltage per diode, Ta=25℃ | IR | | | 5 | μA | Ta=25℃ | 1 |
| Maximum DC reverse current at rated DC blocking voltage per diode, Ta=100℃ | IR | | | 150 | μA | Ta=100℃ | 1 |
| Reverse recovery time | trr | | | 35 | ns | IF=0.5A IR=1A IRR=0.25A | 1 |
| Repetitive peak reverse voltage | VRRM | | | 400 | V | | 1 |
| Average forward current | IF(AV) | | | 6 | A | @60Hz sine wave, Resistance load, Ta=65℃ | 1 |
| Forward surge current (non-repetitive) | IFSM | | | 150 | A | @60Hz Half-sine wave, 1 cycle, Ta=25℃ | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Junction temperature | Tj | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction to ambient | RθJ-A | | | 12 | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `SF66G`
- Footprint: `Diode_THT:D_P600_R-6_P20.00mm_Horizontal`
- 3D model: R-6 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590165897865834496) (4 pp, sha256 `bc2143c299babc26`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sf66g-datasheet.pdf)