component
SED4060G
Public Made by Adomby adom
SINO IC MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
sed4060g: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+353−1
README.md+33@@ -27,6 +27,39 @@ SED4060G from SINO IC, in a DFN-8(5x6). Pinout and pin descriptions extracted fr | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 40 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current, Continuous | ID | | | 60 | A | Continuous | 1 |+| Drain Current, Pulsed | | | | 200 | A | Pulsed | 1 |+| Total Power Dissipation | PD | | | 65 | W | @TA=25℃ | 1 |+| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |+| Thermal Resistance Junction to Case | RθJC | | | 5 | ℃/W | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | ID=250μA, VGS=0 | 2 |+| Drain to Source Leakage Current | IDSS | | | 1 | μA | VDS=40V, VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | | | 300 | nA | VGS=20V | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.2 | V | VDS= VGS, ID=250μA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 7.5 | 9.5 | mΩ | VGS=10V, ID=20A | 2 |+| Forward Transconductance | gFS | | 25 | | S | VDS=5V, ID=20A | 2 |+| Input Capacitance | Ciss | | 942 | | pF | VGS=0V, VDS=20V, f=1MHz | 2 |+| Output Capacitance | Coss | | 309 | | pF | | 2 |+| Reverse Transfer Capacitance | Crss | | 29 | | pF | | 2 |+| Total Gate Charge | Qg | | 14.5 | | nC | VGS=10V, VDS=20V, ID=10A | 2 |+| Gate Source Charge | Qgs | | 2 | | nC | | 2 |+| Gate Drain Charge | Qgd | | 2.5 | | nC | | 2 |+| Turn-On Delay Time | td(on) | | 6 | | ns | VGS=10V, VDS=20V, RGEN=10Ω, ID=10A | 2 |+| Turn-Off Delay Time | td(off) | | 21 | | ns | | 2 |+| Turn-On Rise Time | td(r) | | 5 | | ns | | 2 |+| Turn-Off Fall Time | td(f) | | 5 | | ns | | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=20A | 2 |+| Reverse Recovery Time | trr | | 24 | | ns | TJ=25℃, IF=10A, Di/dt=100A/μs | 2 |+| Reverse Recovery Charge | Qrr | | 19 | | nC | | 2 |+ ## CAD (KiCad official) - Symbol: `SED4060G`
page.json+320−1@@ -184,6 +184,325 @@ "Package": "DFN-8(5x6)", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d399223609a20c19",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current, Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Continuous",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current, Pulsed",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Pulsed",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 65,+ "conditions": "@TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "ID=250μA, VGS=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=40V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "VGS=20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 2.2,+ "conditions": "VDS= VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 7.5,+ "max": 9.5,+ "conditions": "VGS=10V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 25,+ "max": null,+ "conditions": "VDS=5V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 942,+ "max": null,+ "conditions": "VGS=0V, VDS=20V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 309,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 29,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 14.5,+ "max": null,+ "conditions": "VGS=10V, VDS=20V, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "VGS=10V, VDS=20V, RGEN=10Ω, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 21,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "td(r)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "td(f)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V, IS=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 24,+ "max": null,+ "conditions": "TJ=25℃, IF=10A, Di/dt=100A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 19,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -225,4 +544,4 @@ "visibility": { "public": true }-}+}